CPC3710CTR Datasheet CPC3710CTR, CPC3710C | P1-P3

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DS-CPC3710-R02

1

CPC3710

250V N-Channel

Depletion-Mode FET

V

(BR)DSX

/

V

(BR)DGX

R

DS(on)

(max)

I

DSS

(min) Package

250V

P

10 220mA SOT-89

Applications

Features

Description

Ordering Information

Package Pinout

• Ignition Modules

• Normally-On Switches

• Solid State Relays

• Converters

• Telecommunications

• Power Supply

• Low R

DS(on)

at Cold Temperatures

• Low On-Resistance: 10 max. at 25ºC

• High Input Impedance

• High Breakdown Voltage: 250V

P

• Low V

GS(off)

Voltage: -1.6 to -3.9V

• Small Package Size SOT-89

The CPC3710 is an N-channel, depletion-mode, field

effect transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third-generation vertical

DMOS process. The third-generation process realizes

world class, high voltage MOSFET performance

in an economical silicon gate process. Our vertical

DMOS process yields a robust device, with high input

impedance, for use in high-power applications. The

CPC3710 is a highly reliable FET device that has

been used extensively in our solid state relays for

industrial and telecommunications applications.

This device excels in power applications requiring

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3710 offers a low, 10 maximum, on-state

resistance at 25ºC.

The CPC3710 has a minimum breakdown voltage

of 250V

P

, and is available in an SOT-89 package.

As with all MOS devices, the FET structure prevents

thermal runaway and thermal-induced secondary

breakdown.

Circuit Symbol

S

G

D

Part # Description

CPC3710CTR N-Channel Depletion Mode FET, SOT-89 Pkg.

Tape and Reel (1000/Reel)

(SOT-89)

G

D

S

D

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2

R02

CPC3710

Absolute Maximum Ratings are stress ratings. Stresses in

excess of these ratings can cause permanent damage to the

device. Functional operation of the device at conditions beyond

those indicated in the operational sections of this data sheet is

not implied.

Absolute Maximum Ratings @ 25ºC

Electrical Characteristics @ 25ºC (Unless Otherwise Noted)

Parameter Ratings Units

Drain-to-Source Voltage 250 V

P

Gate-to-Source Voltage ±15 V

P

Pulsed Drain Current 600 mA

Total Package Dissipation

1

1.4 W

Junction Temperature 150 ºC

Operational Temperature -55 to +125 ºC

Storage Temperature -55 to +125 ºC

1

Mounted on FR4 board 1"x1"x0.062"

90%

10%

90% 90%

10%10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

on

t

d(on)

t

off

t

d(off)

INPUT

OUTPUT

0V

V

DS

R

gen

0V

-10V

t

f

t

r

Switching Waveform & Test Circuit

Parameter Symbol Conditions Min Typ Max Units

Drain-to-Source Breakdown Voltage V

(BR)DSX

V

GS

= -5V, I

D

=100µA 250 - - V

P

Gate-to-Source Off Voltage V

GS(off)

V

DS

= 5V, I

D

=1mA -1.6 - -3.9 V

Change in V

GS(off)

with Temperatures dV

GS(off)

/dT V

DS

= 5V, I

D

=1A - - 4.5 mV / ºC

Gate Body Leakage Current I

GSS

V

GS

=±15V, V

DS

=0V - - 100 nA

Drain-to-Source Leakage Current I

D(off)

V

GS

= -5V, V

DS

=250V - - 1 µA

V

GS

= -5V, V

DS

=200V, T

A

=125ºC - - 1 mA

Saturated Drain-to-Source Current I

DSS

V

GS

= 0V, V

DS

=15V 220 - - mA

Static Drain-to-Source On-State Resistance R

DS(on)

V

GS

= 0V, I

D

=220mA - - 10



Change in R

DS(on)

with Temperatures dR

DS(on)

/ dT V

GS

= 0V, I

D

=220mA - - 1.1 % / ºC

Forward Transconductance G

FS

I

D

= 100mA, V

DS

= 10V 225 - - m

Input Capacitance C

ISS

V

GS

= -5V

V

DS

= 25V

f= 1MHz

-

100 350

pFCommon Source Output Capacitance C

OSS

30 80

Reverse Transfer Capacitance C

RSS

15 40

Turn-On Delay Time t

d(on)

V

DD

= 25V

I

D

= 150mA

V

GS

= 0V to -10V

R

gen

= 50

-

23 35

ns

Rise Time t

r

820

Turn-Off Delay Time t

d(off)

17 25

Fall time t

f

70 80

Source-Drain Diode Voltage Drop V

SD

V

GS

= -5V, I

SD

= 150mA - 0.6 1.8 V

Thermal Resistance (Junction to Ambient) R

JA

- - 90 - ºC/W



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CPC3710

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3

R02

PERFORMANCE DATA*

*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written speciﬁ cations, please

contact our application department.

Output Characteristics

(T

A

=25ºC)

V

DS

(V)

I

D

(mA)

012345

300

270

240

210

180

150

120

90

60

30

0

6

V

GS

=0.0V

V

GS

=-2.0V

V

GS

=-1.5V

V

GS

=-1.0V

Transfer Characteristics

(V

DS

=5V)

V

GS

(V)

I

D

(mA)

-3.0 -2.5 -2.0 -1.5 -1.0

350

300

250

200

150

100

50

0

+25ºC

-40ºC

+125ºC

V

GS(off)

vs. Temperature

(V

DS

=10V, I

D

=1mA)

-40 -0 40 80 120

Temperature (ºC)

V

GS(off)

(V)

0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

R

ON

vs. Temperature

(V

GS

=0V, I

D

=100mA)

-40 -0 40 80 120

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0

Temperature (ºC)

R

ON

(:)

Ambient Temperature (ºC)

0 20 40 60 80 100 120 140

Power (W)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Power Dissipation

vs. Ambient Temperature

Transconductance Vs. Drain Current

(V

DS

=10V)

I

D

(mA)

010203040

300

250

200

150

100

50

0

50 60 70 80 10090

G

FS

(m )

:

-55ºC

+125ºC

+25ºC

Drain-Source Voltage (V)

0.1 1 10 100 1000

Drain Current (A)

0.001

0.01

0.1

1

Max Rated Safe Operating Area

Capacitance vs. Drain Source Voltage

(V

GS

=-5V)

V

DS

(V)

Capacitance (pF)

01020

160

140

120

100

80

60

40

20

0

30 40

C

ISS

C

RSS

C

OSS

On-Resistance vs. Drain Current

(V

GS

=0V)

I

D

(A)

R

ON

(:)

0 0.06 0.12

20

18

16

14

12

10

8

6

4

2

0

0.18 0.24 0.3

CPC3710CTR

CPC3710CTR

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