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MMSD103T1G

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1 Publication Order Number:
MMSD103T1/D
MMSD103T1G,
SMMSD103T1G
High Voltage Switching
Diode
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
250 V
Peak Forward Current I
F
200 mA
Peak Forward Surge Current I
FM(surge)
625 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Forward Power Dissipation, FR−5 Board
(Note 1) @ T
A
= 25C
Derate above 25C
P
F
400
3.2
mW
mW/C
Thermal Resistance,
Junction−to−Case
R
JL
174
C/W
Thermal Resistance,
Junction−to−Ambient
R
JA
492
C/W
Junction and Storage
Temperature Range
T
J,
T
stg
−55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
1
Cathode
2
Anode
http://onsemi.com
MMSD103T1G SOD−123
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD−123
CASE 425
STYLE 1
JS = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
1
JS M G
G
MARKING DIAGRAM
SMMSD103T1G SOD−123
(Pb−Free)
3,000 / Tape & Reel
MMSD103T1G, SMMSD103T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 200 V)
(V
R
= 200 V, T
J
= 150C)
I
R
−
−
1.0
100
A
Reverse Breakdown Voltage
(I
BR
= 100 A)
V
(BR)
250 −
V
Forward Voltage
(I
F
= 100 mA)
(I
F
= 200 mA)
V
F
−
−
1000
1250
mV
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 5.0
pF
Reverse Recovery Time
(I
F
= I
R
= 30 mA, R
L
= 100 )
t
rr
− 50
ns
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
0.1 F
D.U.T.
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
I
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at I
R(REC)
= 3.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMSD103T1G, SMMSD103T1G
http://onsemi.com
3
Figure 2. Forward Voltage Figure 3. Reverse Leakage
7000
REVERSE VOLTAGE (V)
5000
3000
5
0
21
6000
4000
6
5 10 20 50 100 200
1
2
3
4
300
T
A
= 150C
T
A
= 25C
T
A
= −55C
REVERSE CURRENT (nA)
FORWARD CURRENT (mA)
T
A
= −55C
1 10 100 1000
1
200
400
600
800
1000
1200
FORWARD VOLTAGE (mV)
150C
25C
Figure 4. Diode Capacitance
V
R
, REVERSE VOLTAGE (V)
6543210
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
C
d
, DIODE CAPACITANCE (pF)
87109
0.7
0.75
P1-P3P4-P4

MMSD103T1G

Mfr. #:
Buy MMSD103T1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 250V 200mA
Lifecycle:
New from this manufacturer.
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