NLAS4685
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbo
Parameter Test Conditions
V
CC
(V)
V
IS
(V)
Guaranteed Maximum Limit
Uni
*555C to 255C t855C t1255C
Min Typ* Max Min Max Min Max
t
ON
Turn−On Time
R
L
= 50 C
L
= 35 pF
(Figures 2 and 3)
2.5
3.0
5.0
1.3
1.5
2.8
55
50
30
65
60
35
70
60
35
ns
t
OFF
Turn−Off Time
R
L
= 50 C
L
= 35 pF
(Figures 2 and 3)
2.5
3.0
5.0
1.3
1.5
2.8
55
50
25
65
60
30
70
60
30
ns
t
BBM
Minimum Break−Before−Make
Time
V
IS
= 3.0
R
L
= 300 C
L
= 35 pF
(Figure 1)
3.0 1.5 2 15
ns
Typical @ 25, V
CC
= 5.0 V V
CC
= 3.0 V
C
NC
Off
C
NO
Off
C
NC
On
C
NO
On
NC Off Capacitance, f = 1 MHz
NO Off Capacitance, f = 1 MHz
NC On Capacitance, f = 1 MHz
NO On Capacitance, f = 1 MHz
208
102
547
431
pF
*Typical Characteristics are at 25°C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) (Note 6)
Symbo
Parameter Condition
V
CC
V
Typical
Uni
255C
BW Maximum On−Channel −3dB
Bandwidth or Minimum Frequenc
Response
V
IN
= 0 dBm NC/NO
V
IN
centered between V
CC
and GND
(Figure 4)
3.0 11.5 MHz
V
ONL
Maximum Feed−through On Loss
V
IN
= 0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND (Figure 4)
3.0 −0.05 dB
V
ISO
Off−Channel Isolation
f = 100 kHz; V
IS
= 1 V RMS; C
L
= 5 nF
V
IN
centered between V
CC
and GND(Figure 4)
3.0 −65 dB
Q Charge Injection Select Input to
Common I/O
V
IN
=
V
CC
to
GND, R
IS
= 0 , C
L
= 1 nF
Q = C
L
− V
OUT
(Figure 5)
3.0
5.0
15
20
pC
THD Total Harmonic Distortion
THD + Noise
F
IS
= 20 Hz to 20 kHz, R
L
= R
gen
= 600 , C
L
= 50 pF
V
IS
= 1 V RMS
3.0 0.14 %
VCT Channel−to−Channel Crosstalk
f = 100 kHz; V
IS
= 1 V RMS, C
L
= 5 pF, R
L
= 50
V
IN
centered between V
CC
and GND (Figure 4)
3.0 −81 dB
5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
6. −40°C specifications are guaranteed by design.
