2
Table 1. Absolute Maximum Rating
[1]
Tc = +25°C
Symbol Parameter Units Absolute Max.
I
F
Forward Current (1µs Pulse)
Amp 1
P
IV
Peak Inverse Voltage V 100
T
J
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
θ
JC
Thermal Resistance
[2]
°C/W 500
Notes:
1. Operation in excess of anyone of these conditions may result in permanent damage to the device.
2. T
C
= 25°C, T
C
where is defined to be the temperature at the package pins where contacts is made to the circuit board.
Table 2. Electrical Specifications, Tc = +25°C, each diode
Symbol Parameter and Test Condition Units Min. Typ Max.
V
BR
Breakdown Voltage @ I
R
= 10µA
V – 128 –
V
F
Forward Voltage @ I
F
= 30mA V – 0.90 1.10
R
S
Typical Series Resistance @ Freq = 100MHz & I
F
=1mA Ohm – 4.50 –
R
S
Typical Series Resistance @ Freq = 100MHz & I
F
=5mA Ohm – 2.0 –
C
T
Typical Total Capacitance @ Freq = 1MHz & V
R
=0V pF – 0.50 0.65
T Carrier Lifetime @ I
F
=10mA & I
R
=6mA ns – 200 –
Table 3. Performance Table at Nominal Operating Conditions, Tc = +25°C, IF = 5mA, each diode
IIP3
[1, 4]
Input 3rd order Intercept Point @ freq =0.9GHz dBm – 55.35 –
IIP3
[2, 4]
Input 3rd order Intercept Point @ freq =1.9GHz dBm – 56.24 –
IIP3
[3, 4]
Input 3rd order Intercept Point @ freq =2.4GHz dBm – 57.69 –
IP1dB
[4]
Input 1dB Compressed Power @ freq =0.9GHz dBm – 46.25 –
IP1dB
[4]
Input 1dB Compressed Power @ freq =1.9GHz dBm – 46.80 –
IP1dB
[4]
Input 1dB Compressed Power @ freq =2.4GHz dBm – 47.40 –
Notes:
1. 0.9 GHz OIP3 Test Condition : F1 = 0.9 GHz & F2 = 0.905 GHz, Pin =30 dBm
2. 1.9 GHz OIP3 Test Condition : F1 = 1.9 GHz & F2 = 1.905 GHz, Pin =30 dBm
3. 2.4 GHz OIP3 Test Condition : F1 = 2.4 GHz & F2 = 2.405 GHz, Pin =30 dBm
4. Measurement obtained using the demoboard described in Figure 7 & 8.
