OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMN10H220L-7

P1-P3P4-P6
DMN10H220L
NEW PRODUCT
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
100V
220mΩ @ V
GS
= 10V
1.6A
250mΩ @ V
GS
= 4.5V
1.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Load Switch
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0072 grams (approximate)
Ordering Information (Note 4)
Part Number
Compliance
Case
Packaging
DMN10H220L-7
Standard
SOT23
3,000/Tape & Reel
DMN10H220L-13
Standard
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
2013
2014
2015
2016
2017
2018
2019
A
B
C
D
E
F
G
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Pin Configuration
D
G
S
SOT23
D
S
G
Equivalent Circuit
N1H = Marking Code
YM
= Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y
or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
e3
DMN10H220L
Document number: DS36720 Rev. 3 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN10H220L
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
100
V
Gate-Source Voltage
V
GSS
±16
V
Continuous Drain Current (Note 5) V
GS
= 10V
(Note 6)
T
A
= +25°C
T
A
= +70
°
C
I
D
1.6
1.3
A
(Note 5)
T
A
= +25°C
T
A
= +70°C
I
D
1.4
1.1
A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
0.6
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
8
A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C
0.8
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
94
°C/W
(Note 5)
177
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
100
—
—
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
—
—
1
μA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100
nA
V
GS
= ±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1
—
2.5
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
—
220
mΩ
V
GS
= 10V, I
D
= 1.6A
—
250
V
GS
= 4.5V, I
D
= 1.3A
Diode Forward Voltage
V
SD
—
0.7
1.2
V
V
GS
= 0V, I
S
= 1.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
401
—
pF
V
DS
= 25V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
—
22
—
Reverse Transfer Capacitance
C
rss
—
17
—
Gate Resistnace
R
g
—
2.1
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
4.1
—
nC
V
DS
= 50V, I
D
= 1.6A
Total Gate Charge (V
GS
= 10V)
Q
g
—
8.3
—
Gate-Source Charge
Q
gs
—
1.5
—
Gate-Drain Charge
Q
gd
—
2
—
Turn-On Delay Time
t
D(on)
—
6.8
—
ns
V
DS
= 50V, V
GS
= 4.5V,
R
G
= 6.8Ω, I
D
= 1A
Turn-On Rise Time
t
r
—
8.2
—
Turn-Off Delay Time
t
D(off)
—
7.9
—
Turn-Off Fall Time
t
f
—
3.6
—
Reverse Recovery Time
t
rr
—
17
—
ns
I
F
= 1.1A, di/dt =100A/μs
Reverse Recovery Charge
Q
rr
—
9.8
—
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN10H220L
Document number: DS36720 Rev. 3 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN10H220L
NEW PRODUCT
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0 0.5 1 1.5 2 2.5 3
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I , DRAI
N CURRENT (A)
D
V = 3.5V
GS
V = 4.0V
GS
V = 8.0V
GS
V = 9.0V
GS
V = 10V
GS
V = 4.5V
GS
V = 5.0V
GS
V = 6.0V
GS
0
1
2
3
4
5
6
7
8
9
10
1 2 3 4 5 6 7 8
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I ,
DRA
IN
CURRENT (A)
D
V = 10V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 1 2 3 4 5 6 7 8 9 10
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRA
IN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 4.5V
GS
V = 10V
GS
2 4 6
8 10 12 14
16 18 20
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
I = 200mA
D
I = 100mA
D
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0 1 2 3 4 5 6 7 8 9 10
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50
75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I = 5A
GS
D
V=V
I = 10A
GS
D
10
DMN10H220L
Document number: DS36720 Rev. 3 - 2
3 of 6
www.diodes.com
July 2014
© Diodes Incorporated
P1-P3P4-P6

DMN10H220L-7

Mfr. #:
Buy DMN10H220L-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet