NXP Semiconductors
PMZB200UNE
30 V, N-channel Trench MOSFET
PMZB200UNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 12 March 2015 8 / 14
V
GS
(V)
0 431 2
aaa-016978
2
1
3
4
I
D
(A)
0
T
j
= 150 °C
T
j
= 25 °C
V
DS
> I
D
× R
DSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
aaa-016979
1.0
0.5
1.5
2.0
a
0
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
aaa-016980
0.5
1.0
1.5
V
GS(th)
(V)
0
(1)
(2)
(3)
I
D
= 0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
10
-1
10
2
101
aaa-016981
10
2
10
10
3
C
(pF)
1
(1)
(2)
(3)
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
