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BUK653R3-30C,127

P1-P3P4-P6P7-P9P10-P12P13-P15
BUK653R3-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 July 2011 6 of 14
NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=25°C 30--V
I
D
=250µA; V
GS
=0V; T
j
= -55 °C 27 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 9; see Figure 10
1.8 2.3 2.8 V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--3.3V
I
D
=2.5mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 10
0.8--V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
V
DS
=30V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 11; see Figure 12
- 2.72 3.3 mΩ
V
GS
=4.5V; I
D
=25A; T
j
=25°C;
see Figure 11
; see Figure 12
-3.95.3mΩ
V
GS
=5V; I
D
=25A; T
j
=25°C;
see Figure 11
- 3.45 4.4 mΩ
V
GS
=10V; I
D
=25A; T
j
= 175 °C;
see Figure 11
- 5.75 6.3 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=24V; V
GS
=10V;
see Figure 13
; see Figure 14
-114-nC
I
D
=25A; V
DS
=24V; V
GS
=5V;
see Figure 13; see Figure 14
-66-nC
Q
GS
gate-source charge I
D
=25A; V
DS
=24V; V
GS
=10V;
see Figure 13
; see Figure 14
-18-nC
Q
GD
gate-drain charge - 33.3 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 15
- 5216 6960 pF
C
oss
output capacitance - 896 1100 pF
C
rss
reverse transfer
capacitance
- 537 740 pF
t
d(on)
turn-on delay time V
DS
=25V; R
L
=1Ω; V
GS
=10V;
R
G(ext)
=10Ω
-22-ns
t
r
rise time - 59 - ns
t
d(off)
turn-off delay time - 209 - ns
t
f
fall time -113-ns
L
D
internal drain
inductance
from drain lead 6 mm from package to
centre of die; T
j
=25°C
-4.5-nH
L
S
internal source
inductance
from source lead to source bond pad;
T
j
=25°C
-7.5-nH
BUK653R3-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 July 2011 7 of 14
NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 16
-0.81.2V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V
-50-ns
Q
r
recovered charge - 73 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
T
j
= 25°C; V
DS
= 25 V
T
j
= 25°C and t
p
= 300 us
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
V
DS
= 25 V T
j
= 25°C; I
D
25 A
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK653R3-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 July 2011 8 of 14
NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
Fig 9. Sub-threshold drain current as a function of
gate-source voltage
Fig 10. Gate-source threshold voltage as a function of
junction temperature
T
j
= 25°C; t
p
= 300 µs
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
003aad806
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
01234
V
GS
(V)
I
D
(A)
max
typ
min
003aae542
0
1
2
3
4
-60 0 60 120 180
T
j
(°C)
V
GS(th)
(V)
max @1mA
typ @1mA
min @2.5mA
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK653R3-30C,127

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Buy BUK653R3-30C,127
Manufacturer:
Nexperia
Description:
RF Bipolar Transistors MOSFET N-Chan 30V 100A
Lifecycle:
New from this manufacturer.
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