2N5087G Datasheet 2N5087G, 2N5087RLRAG | P1-P3

April, 2013 − Rev. 5

1 Publication Order Number:

2N5087/D

2N5087

Amplifier Transistor

PNP Silicon

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

50 Vdc

Collector−Base Voltage V

CBO

50 Vdc

Emitter−Base Voltage V

EBO

3.0 Vdc

Collector Current − Continuous I

C

50 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

http://onsemi.com

Device Package Shipping

†

ORDERING INFORMATION

2N5087G TO−92

(Pb−Free)

5000 Units / Bulk

3 COLLECTOR

2

BASE

1 EMITTER

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2N5087RLRAG TO−92

(Pb−Free)

2000/Tape & Reel

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MARKING DIAGRAM

2N

5087

AYWW G

G

(Note: Microdot may be in either location)

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

2N5087

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2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(I

C

= 1.0 mAdc, I

B

= 0)

V

(BR)CEO

50 −

Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0)

V

(BR)CBO

50 −

Vdc

Collector Cutoff Current

(V

CB

= 35 Vdc, I

E

= 0)

I

CBO

− 50

nAdc

Emitter Cutoff Current

(V

EB

= 3.0 Vdc, I

C

= 0)

I

EBO

− 50

nAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 100 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc) (Note 1)

h

FE

250

800

−

Collector−Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

V

CE(sat)

− 0.3

Vdc

Base−Emitter On Voltage

(I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc)

V

BE(on)

− 0.85

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 500 mAdc, V

CE

= 5.0 Vdc, f = 20 MHz)

f

T

40 −

MHz

Collector−Base Capacitance

(V

CB

= 5.0 Vdc, I

E

= 0, f = 1.0 MHz)

C

cb

− 4.0

pF

Small−Signal Current Gain

(I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc, f = 1.0 kHz)

h

fe

250 900

−

Noise Figure

(I

C

= 20 mAdc, V

CE

= 5.0 Vdc, R

S

= 10 kW, f = 10 Hz/15.7 kHz)

(I

C

= 100 mAdc, V

CE

= 5.0 Vdc, R

S

= 3.0 kW, f = 1.0 kHz)

NF

−

2.0

dB

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2N5087

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3

TYPICAL NOISE CHARACTERISTICS

(V

CE

= − 5.0 Vdc, T

A

= 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

10

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.0

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

BANDWIDTH = 1.0 Hz

R

S

≈ 0

I

C

= 10 mA

100 mA

e

n

, NOISE VOLTAGE (nV)

I

n

, NOISE CURRENT (pA)

30 mA

BANDWIDTH = 1.0 Hz

R

S

≈∞

I

C

= 1.0 mA

300 mA

100 mA

30 mA

10 mA

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

2.0

1.0 mA

0.2

300 mA

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

Figure 3. Narrow Band, 100 Hz

I

C

, COLLECTOR CURRENT (mA)

Figure 4. Narrow Band, 1.0 kHz

I

C

, COLLECTOR CURRENT (mA)

10

0.5 dB

BANDWIDTH = 1.0 Hz

R

S

, SOURCE RESISTANCE (OHMS)

R

S

, SOURCE RESISTANCE (OHMS)

Figure 5. Wideband

I

C

, COLLECTOR CURRENT (mA)

10

10 Hz to 15.7 kHz

R

S

, SOURCE RESISTANCE (OHMS)

Noise Figure is Defined as:

NF + 20 log

10

ƪ

e

n

2

) 4KTR

S

) I

n

2

R

S

2

4KTR

S

ƫ

1ń2

= Noise Voltage of the Transistor referred to the input. (Figure 3)

= Noise Current of the Transistor referred to the input. (Figure 4)

= Boltzman’s Constant (1.38 x 10

−23

j/°K)

= Temperature of the Source Resistance (°K)

= Source Resistance (Ohms)

e

n

I

n

K

T

R

S

1.0 dB

2.0 dB

3.0 dB

20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

20 30 50 70 100 200 300 500 700 1.0k

BANDWIDTH = 1.0 Hz

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

2N5087G

2N5087G

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