1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package operating with a voltage supply of
24 V (DC).
1.2 Features and benefits
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
Excellent linearity
1.3 Applications
CATV systems operating in the frequency range of 40 MHz to 750 MHz
1.4 Quick reference data
[1] The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
BGY787
750 MHz, 21.5 dB gain push-pull
Rev. 9 — 19 September 2011 Product data sheet
78923 51
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
G
p
power gain f = 50 MHz 21 21.5 22 dB
f = 750 MHz 21.5 22.5 - dB
I
tot
total current consumption (DC) V
B
=24V
[1]
- 220 240 mA
BGY787 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 September 2011 2 of 12
NXP Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1 input
2 common
3 common
5+V
B
7 common
8 common
9output
91357
2378
5
91
sym095
Table 3. Ordering information
Type number Package
Name Description Version
BGY787 - rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
i
RF input voltage - 60 dBmV
T
stg
storage temperature 40 +100 C
T
mb
mounting base temperature 20 +100 C
BGY787 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 September 2011 3 of 12
NXP Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
5. Characteristics
[1] f
p
= 55.25 MHz; V
p
=44dBmV; f
q
= 691.25 MHz; V
q
= 44 dBmV; measured at f
p
+f
q
=746.5MHz.
[2] Measure according to DIN45004B;
f
p
= 740.25 MHz; V
p
=V
o
; f
q
= 747.25 MHz; V
q
=V
o
6dB; f
r
= 749.25 MHz; V
r
=V
o
6 dB; measured at f
p
+f
q
f
r
= 738.25 MHz.
[3] The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
Table 5. Characteristics at bandwidth 40 MHz to 750 MHz
V
B
=24V; T
case
=30
C; Z
S
=Z
L
=75
.
Symbol Parameter Conditions Min Typ Max Unit
G
p
power gain f = 50 MHz 21 21.5 22 dB
f = 750 MHz 21.5 22.5 - dB
SL slope cable equivalent f = 40 MHz to 750 MHz 0 1 1.5 dB
FL flatness of frequency response f = 40 MHz to 750 MHz - 0.2 0.5 dB
s
11
input return losses f = 40 MHz to 80 MHz 20 33 - dB
f = 80 MHz to 160 MHz 18.5 30 - dB
f = 160 MHz to 320 MHz 17 25 - dB
f = 320 MHz to 640 MHz 15.5 22 - dB
f = 640 MHz to 750 MHz 14 20.5 - dB
s
22
output return losses f = 40 MHz to 80 MHz 20 28.5 - dB
f = 80 MHz to 160 MHz 18.5 27.5 - dB
f = 160 MHz to 320 MHz 17 25 - dB
f = 320 MHz to 640 MHz 15.5 22 - dB
f = 640 MHz to 750 MHz 14 20 - dB
S21
phase response f = 50 MHz 45 - +45 deg
CTB composite triple beat 110 channels flat; V
o
=44dBmV;
measured at 745.25 MHz
- 54.5 53 dB
X
mod
cross modulation 110 channels flat; V
o
=44dBmV;
measured at 55.25 MHz
- 54 52 dB
CSO composite second order distortion 110 channels flat; V
o
=44dBmV;
measured at 746.5 MHz
- 57.5 53 dB
d
2
second order distortion
[1]
- 75 63 dB
V
o
output voltage d
im
= 60 dB
[2]
61 63 - dBmV
F noise figure f = 50 MHz - 4 5 dB
f = 450 MHz - - 5.5 dB
f = 550 MHz - - 5.5 dB
f = 600 MHz - - 6 dB
f = 750 MHz - 5 6.5 dB
I
tot
total current consumption (DC)
[3]
-220240mA

BGY787,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC AMP PUSH PULL SOT115J
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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