IDH15S120AKSA1

IDH15S120
thinQ!
TM
SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Optimized for high temperature operation
thinQ!
TM
Diode designed for fast switching applications like:
• Lowest Figure of Merit Q
C
/I
F
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
Type Package Marking Pin 1 Pin 2
IDH15S120 PG-TO220-2 D15S120 C A
PG-TO220-2
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
600 V
Q
C
3.2 nC
I
F
; T
C
< 130 °C 3 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
600 V
Q
C
3.2 nC
I
F
; T
C
< 130 °C 3 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
600 V
Q
C
3.2 nC
I
F
; T
C
< 130 °C 3 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
600 V
Q
C
3.2 nC
I
F
; T
C
< 130 °C 3 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
Rev. 2.0 page 1 2010-04-20
Maximum ratings
Parameter Symbol Conditions Unit
Continuous forward current
I
F
T
C
<130 °C
15 A
I
F,SM
T
C
=25 °C, t
p
=10 ms
78
T
C
=150 °C, t
p
=10 ms
66
Non-repetitive peak forward current
I
F,max
T
C
=25 °C, t
p
=10 µs
300
i
2
dt
T
C
=25 °C, t
p
=10 ms
30
A
2
s
T
C
=150 °C, t
p
=10 ms
20
Repetitive peak reverse voltage
V
RRM
T
j
=25 °C
1200 V
Diode dv/dt ruggedness
dv/ dt
V
R
= 0….960 V
50 V/ns
Power dissipation
P
tot
T
C
=25 °C
185 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6mm (0.063 in.)
from case for 10s
260
Mounting torque M3 and M3.5 screws 60 Mcm
i²t value
Value
Surge non-repetitive forward current,
sine halfwave
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
Type Package Marking Pin 1 Pin 2
IDH15S120 PG-TO220-2 D15S120 C A
PG-TO220-2
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
600 V
Q
C
3.2 nC
I
F
; T
C
< 130 °C 3 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
600 V
Q
C
3.2 nC
I
F
; T
C
< 130 °C 3 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
600 V
Q
C
3.2 nC
I
F
; T
C
< 130 °C 3 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
V
DC
600 V
Q
C
3.2 nC
I
F
; T
C
< 130 °C 3 A
Product Summary
V
DC
1200 V
Q
C
54 nC
I
F
; T
C
< 130 °C 15 A
Product Summary
PG-TO220-2
Rev. 2.0 page 1 2010-04-20
IDH15S120
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 0,8 K/W
Thermal resistance,
junction - ambient
Thermal resistance,
junction- ambient,
leaded
--62
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
I
R
=0.05 mA, T
j
=25 °C
1200 - - V
Diode forward voltage
V
F
I
F
=15 A, T
j
=25 °C
- 1,65 1,8
I
F
=15 A, T
j
=150 °C
- 2,55 -
Reverse current
I
R
V
R
=1200 V, T
j
=25 °C
- 15 360 µA
V
R
=1200 V, T
j
=150 °C
- 60 1500
Values
R
thJA
Rev. 2.0 page 2 2010-04-20
AC characteristics
Total capacitive charge
Q
c
-54-nC
Switching time
2)
t
c
- - <10 ns
Total capacitance
C
V
R
=1 V, f=1 MHz
- 750 - pF
V
R
=300 V, f=1 MHz
-60-
V
R
=600 V, f=1 MHz
-54-
1)
J-STD20 and JESD22
V
R
=400 V,I
F
I
F,max
,
di
F
/dt=200 A/µs,
T
j
=150 °C
2)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
which is dependent on T
j
, I
LOAD
and di/dt. No reverse recovery time constant t
rr
due
to absence of minority carrier injection
4)
Only capacitive charge occuring, guaranteed by design
3)
Under worst case Z
th
conditions.
Rev. 2.0 page 2 2010-04-20
IDH15S120
1 Power dissipation 2 Diode forward current
P
tot
=f(T
C
)
I
F
=f(T
C
)
3)
; T
j
175 °C; parameter: D = t
p
/T
0
40
80
120
160
200
25 75 125 175
P
tot
[W]
T
C
[°C]
0.1
0.2
0.5
0.7
1
0
20
40
60
80
100
120
140
25 75 125 175
I
F
[A]
T
C
[°C]
Rev. 2.0 page 3 2010-04-20
3 Typ. forward characteristic 4 Typ. Reverse current vs. reverse voltage
I
F
=f(V
F
); t
p
=400 µs E
C
=f(V
R
)
parameter: T
j
0
40
80
120
160
200
25 75 125 175
P
tot
[W]
T
C
[°C]
-55 °C
100 °C
150 °C
175 °C
25 °C
0
5
10
15
20
25
30
012345
I
F
[A]
V
SD
[V]
0.1
0.2
0.5
0.7
1
0
20
40
60
80
100
120
140
25 75 125 175
I
F
[A]
T
C
[°C]
-55 °C
25 °C
100 °C
150 °C
175 °C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
200 400 600 800 1000 1200
I
R
[µA]
V
R
[V]
Rev. 2.0 page 3 2010-04-20

IDH15S120AKSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
DIODE SCHOTTKY 1200V 15A TO220-2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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