MBR20L120CT C0G

CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
SYMBOL UNIT
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
I
RRM
A
μA
mA
dV/dt V/μs
R
θJC
O
C/W
T
J
O
C
T
STG
O
C
Document Number: DS_D1308038 Version: G13
Polarity: As marked
MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25 unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
MECHANICAL DATA
TO-220AB
Case: TO-220AB
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 20
100 120
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
I
FRM
20 A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
150 A
V
TYP
Peak repetitive reverse surge current (Note 1) 1
Maximum instantaneous forward voltage (Note 2)
I
F
= 10A, T
J
=25
I
F
= 10A, T
J
=125
I
F
= 20A, T
J
=25
I
F
= 20A, T
J
=125
V
F
MAX TYP MAX
0.72
Voltage rate of change (Rated V
R
)
10000
Typical thermal resistance
Operating junction temperature range - 55 to +150
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
I
R
TYP MAX TYP
Storage temperature range - 55 to +150
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
MBR20L100CT MBR20L120CT
100 120
70 84
0.75 0.78 0.83
0.58 0.68 0.63 0.72
10
0.81 0.85 0.86 0.90
0.67 0.75 0.73 0.80
2.8 3.0
MAX
1.10 20 1.00 20
1.20 15 1.40
CREAT BY ART
PART NO.
MBR20L1xxCT
PART NO.
MBR20L100CT
MBR20L100CT
MBR20L100CT
(TA=25 unless otherwise noted)
Document Number: DS_D1308038 Version: G13
MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING
CODE
GREEN COMPOUND
CODE
PACKAGE
Note 1: "xx" defines voltage from 100V (MBR20L100CT) to 120V (MBR20L120CT)
PACKING
Prefix "H" C0 Suffix "G" TO-220AB 50 / Tube
EXAMPLE
PREFERRED P/N
AEC-Q101
QUALIFIED
PACKING CODE
GREEN COMPOUND
CODE
DESCRIPTION
MBR20L100CT C0 C0
MBR20L100CT C0G C0 G Green compound
MBR20L100CTHC0 H C0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
5
10
15
20
25
0 25 50 75 100 125 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (
o
C)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
MBR20L100CT
MBR20L120CT
0
25
50
75
100
125
150
175
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM FORWARD SURGE
CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
MBR20L100CT
MBR20L120CT
0.01
0.1
1
10
100
1000
10000
10 20 30 40 50 60 70 80 90 100
REVERSE LEAKAGE CURRENT (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125
TJ=25
MBR20L100CT
MBR20L120CT
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
TJ=125
TJ=25
MBR20L100CT
MBR20L120CT
CREAT BY ART
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 13.19 14.79 0.519 0.582
H 2.41 2.67 0.095 0.105
I 4.42 4.76 0.174 0.187
J 1.14 1.40 0.045 0.055
K 5.84 6.86 0.230 0.270
L 2.20 2.80 0.087 0.110
M 0.35 0.64 0.014 0.025
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1308038 Version: G13
MARKING DIAGRAM
MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
MBR20L100CT
MBR20L120CT
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
1000
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG

MBR20L120CT C0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Schottky Diodes & Rectifiers 20A 120V Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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