Characteristics STPS1045B
2/8 DocID6085 Rev 9
1 Characteristics
To evaluate the conduction losses, use the following equation:
P = 0.42 x I
F(AV)
+ 0.015 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
/ pin Forward rms current 7 A
I
F(AV)
Average forward current,
δ 0.5, square wave
T
c
= 150 °C 10 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75 A
P
ARM
Repetitive peak avalanche power t
p
= 10 s, T
j
= 125 °C 285 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
Table 3. Thermal resistance
Symbol Parameter Max. value Unit
R
th(j-c)
Junction to case 3 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-100A
T
j
= 125 °C - 7 15 mA
V
F
(2)
2. Pulse test: t
p
= 380 µs, < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
-0.63
V
T
j
= 125 °C - 0.50 0.57
T
j
= 25 °C
I
F
= 20 A
-0.84
T
j
= 125 °C - 0.65 0.72
