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VS-VSKCU300/06PBF

P1-P3P4-P6
VS-VSKCU300/06PbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
1
Document Number: 93155
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Diodes, 300 A
(INT-A-PAK Power Modules)
FEATURES
• Electrically insulated by DBC ceramic
• 3500 V
RMS
isolating voltage
•Standard JEDEC
®
package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style INT-A-PAK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
V
R
600 V
V
F
(typical) 1.23
t
rr
(typical) 130 ns
I
F(AV)
at T
C
300 A at 48 °C
Package INT-A-PAK
Circuit Two diodes common cathode
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Continuous forward current per leg I
F
T
C
= 25 °C 435
AT
C
= 100 °C 230
Single pulse forward current I
FSM
Limited by junction temperature TBD
Maximum power dissipation per leg P
D
T
C
= 25 °C 781
W
T
C
= 100 °C 313
Operating junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
RMS insulation voltage V
INS
50 Hz, circuit to base,
all terminals shorted, t = 1 s
3500 V
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 500 μA 600 - -
V
Forward voltage drop per leg V
FM
I
F
= 150 A - 1.23 1.53
I
F
= 300 A - 1.43 1.96
I
F
= 150 A, T
J
= 125 °C - 1.11 1.29
I
F
= 300 A, T
J
= 125 °C - 1.39 1.73
Maximum reverse leakage current I
RM
T
J
= 150 °C, V
R
= 600 V - - 50 mA
VS-VSKCU300/06PbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
2
Document Number: 93155
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
T
J
= 25 °C
I
F
= 50 A
dI/dt = 200 A/μs
V
R
= 400 V (per leg)
- 130 165
ns
T
J
= 125 °C - 195 260
Peak recovery current I
rr
T
J
= 25 °C - 11 18
A
T
J
= 125 °C - 20 30
Reverse recovery charge Q
rr
T
J
= 25 °C - 670 1485
nC
T
J
= 125 °C - 1800 3900
Peak rate of recovery current dI
(rec)M
/dt T
J
= 125 °C - - 400 A/μs
Softness factor per leg s
I
F
= 50 A, T
J
= 25 °C, dI/dt = 400 A/μs, V
R
= 200 V - 0.2 -
I
F
= 50 A, T
J
= 125 °C, dI/dt = 400 A/μs, V
R
= 200 V - 0.22 -
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and
storage temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 0.16
K/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased 0.05
Mounting
torque ± 10 %
to heatsink
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow the spread of the compound.
4 to 6 Nm
busbar
Approximate weight
200 g
7.1 oz.
Case style INT-A-PAK
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.5 1.0 1.5 2.52.0 3.0 3.5
1
10
1000
100
93155_01
T
J
= 25 °C
T
J
= 150 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
100 200 300 500400 600
0.001
0.01
0.1
1
10
100
93155_02
T
J
= 150 °C
T
J
= 25 °C
VS-VSKCU300/06PbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Apr-14
3
Document Number: 93155
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Maximum Allowable Case Temperature vs. Average Forward Current
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt (Per Leg)
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
200100 300 400
500
0
80
120
140
160
0
40
60
100
20
93155_03
Square wave (D = 0.50)
DC
0.001
0.01
0.1
1
0.00001
93155_04
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
300 400200100
500
0
93155_05
700
900
0
300
200
500
600
800
400
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
t
rr
(ns)
dI
F
/dt (A/μs)
100
93155_06
1000
10
1000
100
V
R
= 400 V
I
F
= 50 A, T
J
= 25 °C
P1-P3P4-P6

VS-VSKCU300/06PBF

Mfr. #:
Buy VS-VSKCU300/06PBF
Manufacturer:
Vishay Semiconductors
Description:
Discrete Semiconductor Modules Output & SW Modules - IAP HEXFRED-e3
Lifecycle:
New from this manufacturer.
Delivery:
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