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BLF4G20S-110B,112

P1-P3P4-P6P7-P9P10-P12P13-P14
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1] ACPR
400
at 30 kHz resolution bandwidth.
[2] ACPR
600
at 30 kHz resolution bandwidth.
1.2 Features
■ Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I
Dq
of 650 mA:
◆ Load power = 48 W (AV)
◆ Gain = 13.8 dB (typ)
◆ Efficiency = 38.5 % (typ)
◆ ACPR
400
= −61 dBc (typ)
◆ ACPR
600
= −74 dBc (typ)
◆ EVM
rms
= 2.1 % (typ)
■ Easy power control
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1800 MHz to 2000 MHz)
BLF4G20-110B;
BLF4G20S-110B
UHF power LDMOS transistor
Rev. 01 — 23 January 2006 Product data sheet
Table 1: Typical performance
f = 1930 MHz to 1990 MHz; T
case
=25
°
C; in a class-AB production test circuit.
Mode of operation V
DS
(V)
P
L
(W)
G
p
(dB)
(typ)
η
D
(%)
(typ)
ACPR
400
(dBc)
(typ)
ACPR
600
(dBc)
(typ)
EVM
rms
(%)
(typ)
CW 28 100 13.4 49 - - -
GSM EDGE 28 48 (AV) 13.8 38.5 −61
[1]
−74
[2]
2.1
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
9397 750 14611 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 23 January 2006 2 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
■ Internally matched for ease of use
1.3 Applications
■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
[1] Connected to flange
3. Ordering information
Table 2: Pinning
Pin Description Simplified outline Symbol
BLF4G20-110B (SOT502A)
1 drain
2 gate
3 source
[1]
BLF4G20S-110B (SOT502B)
1 drain
2 gate
3 source
[1]
3
2
1
1
3
2
sym039
3
2
1
1
3
2
sym039
Table 3: Ordering information
Type number Package
Name Description Version
BLF4G20-110B - flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLF4G20S-110B - earless flanged LDMOST ceramic package; 2 leads SOT502B
9397 750 14611 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 23 January 2006 3 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
4. Limiting values
5. Thermal characteristics
6. Characteristics
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
V
DS
drain-source voltage - 65 V
V
GS
gate-source voltage −0.5 +15 V
I
D
drain current - 12 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 200 °C
Table 5: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-case)
thermal resistance from
junction to case
T
case
=80°C
P
L
= 40 W - 0.76 0.85 K/W
P
L
= 100 W - 0.65 0.74 K/W
Table 6: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)DSS
drain-source breakdown
voltage
V
GS
=0V; I
D
= 0.9 mA 65 - - V
V
GS(th)
gate-source threshold
voltage
V
DS
= 10 V; I
D
= 180 mA 2.5 3.1 3.5 V
V
GSq
gate-source quiescent
voltage
V
DS
= 28 V; I
D
= 900 mA 2.7 3.2 3.7 V
I
DSS
drain leakage current V
GS
=0V; V
DS
=28V - - 3 µA
I
DSX
drain cut-off current V
GS
=V
GS(th)
+ 6 V; V
DS
= 10 V 27 30 - A
I
GSS
gate leakage current V
GS
=15V; V
DS
= 0 V - - 300 nA
g
fs
transfer conductance V
DS
=10V; I
D
= 10 A - 9.0 - S
R
DS(on)
drain-source on-state
resistance
V
GS
=V
GS(th)
+ 6 V; I
D
=6A - 90 - mΩ
C
rs
feedback capacitance V
GS
=0V; V
DS
= 28 V; f = 1 MHz - 2.5 - pF
P1-P3P4-P6P7-P9P10-P12P13-P14

BLF4G20S-110B,112

Mfr. #:
Buy BLF4G20S-110B,112
Manufacturer:
NXP Semiconductors
Description:
FET RF 65V 1.99GHZ SOT502B
Lifecycle:
New from this manufacturer.
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