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IXGT24N60CD1
P1-P3
P4-P5
4 - 5
© 2000 IXYS All rights reserved
IXGH 24N60CD1
IXGT 24N60CD1
Pulse Widt
h - Seconds
0.00
001
0.0001
0.001
0.0
1
0.1
1
Z
thJC
(K
/W)
0.0
01
0.01
0.1
1
D=0.
2
V
CE
- V
ol
ts
0
100
200
300
40
0
500
600
I
C
- A
mper
es
0.1
1
10
100
Q
g
- nanoc
oulom
bs
0
2
04
06
08
0
V
GE
- Volts
0
4
8
12
16
R
G
- O
hm
s
0
1
02
03
04
05
06
0
E
(OFF)
- m
illijo
ules
0.0
0.5
1.0
1.5
2.0
E
(ON)
- mill
ijoule
s
0.0
0.5
1.0
1.5
2.0
I
C
- A
mp
ere
s
0
1
02
03
04
05
0
E
(OFF)
- mi
lliJoul
es
0.0
0.5
1.0
1.5
2.0
E
(ON)
- mill
ijoules
0.00
0.25
0.50
0.75
1.00
V
CE
= 300V
I
C
= 12A
I
C
= 24A
E
(ON
)
E
(OF
F)
T
J
= -55
to +
125
°
C
R
G
= 4.7
dV
/dt < 5V
/
n
s
D=0.
5
D=0.1
D=0.
05
D=0.0
2
D=0.
01
S
ing
le p
ulse
D = Dut
y Cy
cl
e
R
G
= 10
T
J
= 125
°
C
40
E
(ON
)
I
C
=48A
E
(OFF)
T
J
= 125
°
C
E
(ON)
I
C
= 24A
E
(ON
)
E
(OFF)
E
(OFF)
Fig.
11
IGBT Transient Thermal Resistance
Fig.10.
Turn-off Safe Operating Area
Fig.9.
Gate Charge
Fig.7.
Dependence of E
OFF
and E
OFF
on I
C
Fig.8.
D
ependence of E
OFF
on R
G
5 - 5
© 2000 IXYS All rights reserved
IXGH 24N60CD1
IXGT 24N60CD1
200
600
1000
0
400
800
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.0
1
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
1000
0123
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
Z
thJC
A/
s
µ
s
DSEP 29-06
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100
°
C
V
R
= 300V
T
VJ
= 100
°
C
I
F
= 30A
Fig.
14 Peak reverse current I
RM
versus -di
F
/dt
Fig.
13
Reverse recovery charge Q
r
versus -di
F
/dt
Fig.
12
Forward current I
F
versus V
F
T
VJ
= 100
°
C
V
R
= 300V
T
VJ
= 100
°
C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig.
15 Dynamic parameters Q
r
, and
I
RM
versus T
VJ
temperature
Fig.
16
Recovery time t
rr
versus -di
F
/dt
Fig.
17 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Constants for Z
thJC
calculation:
iR
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
3
0.205
0.0162
T
VJ
=25
°
C
T
VJ
=100
°
C
T
VJ
=150
°
C
Fig.
18
Transient thermal resistance junction to case
P1-P3
P4-P5
IXGT24N60CD1
Mfr. #:
Buy IXGT24N60CD1
Manufacturer:
Description:
IGBT 600V 48A 150W TO268
Lifecycle:
New from this manufacturer.
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