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MBRA340T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
January, 2018 − Rev. 9
1 Publication Order Number:
MBRA340T3/D
MBRA340, NRVBA340,
SBRA340T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guardring for Stress Protection
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Lead Indicated by Polarity Band
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
• Device Meets MSL 1 Requirements
Device
Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
MARKING DIAGRAM
SMA
CASE 403D
STYLE 1
A34
AYWWG
www.onsemi.com
MBRA340T3G
NRVBA340T3G,
NRVBA340T3G−VF01,
SBRA340T3G
Cathode Anode
A34 = Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
12
SMA
(Pb−Free)
5,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
**The Assembly Location code (A) is front sid
e
optional. In cases where the Assembly Location
is
stamped in the package bottom (molding ejecter pin
),
the front side assembly code may be blank.
(Note: Microdot may be in either location)
MBRA340, NRVBA340, SBRA340T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 100°C)
I
O
3.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
100
A
Storage/Operating Case Temperature T
stg
, T
C
−55 to +150 °C
Operating Junction Temperature (Note 1) T
J
−55 to +150 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2)
R
θ
JL
R
θ
JA
15
81
°C/W
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 3.0 A)
V
F
T
J
= 25°C T
J
= 100°C
Volts
0.450 0.390
Maximum Instantaneous Reverse Current
(V
R
= 40 V)
I
R
T
J
= 25°C T
J
= 100°C
mA
0.3 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
10
1
0.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.10 0.30 0.50
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
0.20 0.40 0.60
T
J
= 100°C
10
1
0.1
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
0.10 0.30 0.50
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
0.20 0.40
T
J
= 100°C
0.6
0
MBRA340, NRVBA340, SBRA340T3G
www.onsemi.com
3
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10E−6
100E−6
30 4020100
I
R
, REVERSE CURRENT (AMPS)
100E−9
100E−12
T
J
= 125°C
1E−3
1E−6
10E−9
1E−9
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
10E−6
100E−6
30 4
0
20100
I
R
, MAXIMUM REVERSE CURRENT (AMPS
)
T
J
= 125°C
1E−3
1E−6
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
Figure 5. Current Derating
25 50 75
0
2.5
I
O
, AVERAGE FORWARD CURRENT (AMPS)
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
0.5 1.5 2 30 1 2.5
1.8
0
0.6
I
O
, AVERAGE FORWARD CURRENT (AMPS)
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
Figure 7. Capacitance
0.5
1
1.5
2
5
3
3.5
4.5
SQUARE WAVE
dc
3.5 54.5
0.2
0.4
1.0
0.8
1.6
100 150125
Figure 8. Typical Operating Temperature
Derating
V
R
, REVERSE VOLTAGE (VOLTS)
302520151050
100
1000
C, CAPACITANCE (pF)
40
V
R
, DC REVERSE VOLTAGE (VOLTS)
302520151050
115
105
95
85
75
65
55
125
T
J
, DERATED OPERATING TEMPERATURE (°C)
I
pk
/I
O
= 10
I
pk
/I
O
= 5
I
pk
/I
O
= p
freq = 20 kHz
1.4
1.2
dc
SQUARE
WAVE
I
pk
/I
O
= p
I
pk
/I
O
= 5
I
pk
/I
O
= 10
I
pk
/I
O
= 20
35
T
J
= 25 °C
4035
R
q
JA
= 22 °C/W
R
q
JA
= 43 °C/W
R
q
JA
= 96 °C/W
R
q
JA
= 81 °C/W
4
4
R
q
JA
= 63 °C/W
P1-P3P4-P5

MBRA340T3G

Mfr. #:
Buy MBRA340T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 3A 40V
Lifecycle:
New from this manufacturer.
Delivery:
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