RJU002N06T106

RJU002N06
Data Sheet
4/4
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.A
1
10
100
0.01 0.1 1 10 100
Ciss
Coss
Crss
Ta=25°C
f=1MHz
V
GS
=0V
0.001
0.01
0.1
1
0.1 1 10 100
Ta = 25°C
Single Pulse
MOUNTED ON SERAMIC BOARD
DC operation
Operation in this area is limited by R
DS(ON)
(V
GS
= 4.5V)
P
W
=10ms
1ms 100us
Fig.10 Typical Capacitance
vs. Drain-Source Voltage
Fig.11 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE : V
DS
[V]
CAPACITANCE : C [pF]
DRAIN-SOURCE VOLTAGE : V
DS
[V]
DRAIN CURRENT : I
D
(A)
1
10
100
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
Ta = 2C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 625 °C/W
Mounted on a SERAMIC board
Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width
PULSE WIDTH : Pw(s)
NORMARIZED TRANSIENT THERMA
L
 
RESISTANCE : r (t)
Appendix-Rev4.1
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Appendix
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upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
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Great care was taken in ensuring the accuracy of the information specified in this document. However, should
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sponsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
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RJU002N06T106

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 60V 200MA SOT-323
Lifecycle:
New from this manufacturer.
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