IS31AP4991
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 10/18/2012
5
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply voltage, V
CC
-0.3V ~ +6.0V
Voltage at any input pin -0.3V ~ V
CC
+0.3V
Maximum junction temperature, T
JMAX
150°C
Storage temperature range, T
STG
-65°C ~ +150°C
Operating temperature range, T
A
40°C ~ +85°C
Note 1: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
The following specifications apply for C
IN
= 0.22F, R
IN
= R
F
= 20k, C
BYPASS
= 1F, unless otherwise specified.
Limits apply for T
A
= 25°C. V
CC
=5V (Note 2 or specified)
Symbol Parameter Condition Typ. Limit Unit
I
CC
Quiescent power supply current V
CC
= 0V, Io = 0A, no Load 4.8 mA (max)
I
STBY
Standby current V
STBY
= GND, R
L
= 1 A(max)
V
STBYH
Shutdown voltage input high V
CC
= 5.5V 1.4 V(min)
V
STBYL
Shutdown voltage input low V
CC
= 2.7V 0.4 V(max)
V
OS
Output offset voltage
15 mV (max)
Po Output power (8)
THD+N = 1%; f = 1kHz 1.18
W
THD+N = 10%; f = 1kHz 1.46
t
WU
Wake-up time (Note 3) C
BYPASS
= 1F 115 ms
THD+N
Total harmonic distortion+noise
(Note 3)
Po = 0.5Wrms; f = 1kHz 0.025 %
PSRR
Power supply rejection ratio
(Note 3)
Vripple p-p = 200mV
Input Grounded
f = 217Hz 65
dB
f = 1kHz 77
The following specifications apply for C
IN
= 0.22F, R
IN
= R
F
= 20k, C
BYPASS
= 1F, unless otherwise specified.
Limits apply for T
A
= 25°C. V
CC
=3V (Note 2 or specified)
Symbol Parameter Condition Typ. Limit Unit
I
CC
Quiescent power supply current V
CC
= 0V, Io = 0A, no Load 3.8 mA(max)
I
STBY
Standby current V
STBY
= GND, R
L
= 1 A(max)
Po Output power (8)
THD+N = 1%; f = 1kHz 405
mW
THD+N = 10%; f = 1kHz 502
t
WU
Wake-up time (Note 3) C
BYPASS
= 1F 102 ms
THD+N
Total harmonic distortion+noise
(Note 3)
Po = 0.3Wrms; f = 1kHz 0.027
%
Note 2: Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over other
temperature range, are guaranteed by design, characterization and process control.
Note 3: Guaranteed by design.
