NCV8877
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (−40°C < T
J
< 150°C, 3.6 V < V
OUT
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol Conditions Min Typ Max Unit
GENERAL
Quiescent Current, Sleep Mode
I
q,sleep
V
OUT
= 13.2 V, T
J
= 25°C, DISB = 0 V − 12 14
mA
Quiescent Current, No switching I
q,off
Into V
OUT
pin, VOUT,reg < V
OUT
<
VOUT,des, No switching
− 2.2 4.0 mA
OSCILLATOR
Switching Frequency
F
SW
153 − 501 kHz
R
OSC
Voltage V
ROSC
− 1.0 − V
Switching Frequency F
SW
ROSC = Open 153 170 187 kHz
Default Switching F
SW
ROSC = Open
ROSC = 100 kW
ROSC = 20 kW
ROSC = 10 kW
153
180
283
409
170
200
315
455
187
220
347
501
kHz
Minimum Pulse Width t
on,min
NCV887700
NCV887701
NCV887711
NCV887720
NCV887721
NCV887740
90
90
89
90
90
90
115
115
115
115
115
115
145
145
146
145
145
145
ns
Maximum Duty Cycle D
max
ROSC = OPEN 81 83 85 %
Slope Compensating Ramp
(Note 2)
S
a
NCV887700
NCV887701
NCV887711
NCV887720
NCV887721
NCV887740
30
46
45
46
46
46
34
53
53
53
53
53
38
60
61
60
60
60
mV/ ms
DISABLE
DISB Pull−down Current (Note 2)
I
DIS
V
DIS
= 5 V − 0.6 1.0
mA
DISB Input High Voltage V
d,ih
2.0 − 5.0 V
DISB Input High Voltage Hysteresis V
d,hys
− 500 − mV
DISB Input Low Voltage V
d,il
0 − 800 mV
CURRENT SENSE AMPLIFIER
Low−Frequency Gain
A
csa
Input−to−output gain at dc, ISNS ≤ 1 V 0.9 1.0 1.1 V/V
Bandwidth BW
csa
Gain of A
csa
− 3 dB 2.5 − − MHz
ISNS Input Bias Current I
sns,bias
Out of ISNS pin − 30 50
mA
Current Limit Threshold Voltage V
cl
Voltage on ISNS pin NCV887700
NCV887701
NCV887711
NCV887720
NCV887721
NCV887740
360
180
180
180
180
180
400
200
200
200
200
200
440
220
220
220
220
220
mV
Current Limit, Response Time (Note
2)
t
cl
CL tripped until GDRV falling edge,
V
ISNS
= V
cl
(typ) + 60 mV
− 80 125 ns
Overcurrent Protection,
Threshold Voltage
%V
ocp
Percent of V
cl
125 150 175 %
Overcurrent Protection,
Response Time (Note 2)
t
ocp
From overcurrent event, Until switching
stops, V
ISNS
= V
OCP
+ 40 mV
− 80 125 ns
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
g
m,vea
V
OUT
= ±100 mV 0.8 1.2 1.63 mS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Not tested in production. Limits are guaranteed by design.