APTGT50SK170T1G Datasheet APTGT50SK170T1G | P1-P3

APTGT50SK170T1G

APTGT50SK170T1G – Rev 1 October, 2012

www.microsemi.com

1

–

6

7

CR1

CR2

8

12

4

3

NTC

12

56

Q1

11

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1700 V

T

C

= 25°C

75

I

C

Continuous Collector Current

T

C

= 80°C

50

I

CM

Pulsed Collector Current T

C

= 25°C 100

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

312 W

RBSOA Reverse Bias Safe Operating Area T

j

= 125°C 100A @ 1600V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Application

 AC and DC motor control

 Switched Mode Power Supplies

Features

 Trench + Field Stop IGBT3

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Very low stray inductance

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 RoHS Compliant

Buck chopper

Trench + Field Stop IGBT3

Power Module

V

CES

= 1700V

I

C

= 50A @ Tc = 80°C

APTGT50SK170T1G

APTGT50SK170T1G – Rev 1 October, 2012

www.microsemi.com

2

–

6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1700V 250 µA

T

j

= 25°C 2.0 2.4

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

= 15V

I

C

= 50A

T

j

= 125°C 2.4

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 1mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 4400

C

oes

Output Capacitance 180

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

150

pF

T

d(on)

Turn-on Delay Time 370

T

r

Rise Time 40

T

d(off)

Turn-off Delay Time 650

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= 15V

V

Bus

= 900V

I

C

= 50A

R

G

= 10

180

ns

T

d(on)

Turn-on Delay Time 400

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 800

T

f

Fall Time

Inductive Switching (125°C)

V

GE

= 15V

V

Bus

= 900V

I

C

= 50A

R

G

= 10

300

ns

E

on

Turn-on Switching Energy T

j

= 125°C 16

E

off

Turn-off Switching Energy

V

GE

= 15V

V

Bus

= 900V

I

C

= 50A

R

G

= 10

T

j

= 125°C 15

mJ

Chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1700 V

T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current V

R

=1700V

T

j

= 125°C 500

µA

I

F

DC Forward Current

Tc = 80°C 50 A

T

j

= 25°C 1.8 2.2

V

F

Diode Forward Voltage I

F

= 50A

T

j

= 125°C 1.9

V

T

j

= 25°C 385

t

rr

Reverse Recovery Time

T

j

= 125°C 490

ns

T

j

= 25°C 14

Q

rr

Reverse Recovery Charge

T

j

= 125°C 23

µC

T

j

= 25°C 6

E

r

Reverse Recovery Energy

I

F

= 50A

V

R

= 900V

di/dt =800A/µs

T

j

= 125°C 12

mJ

APTGT50SK170T1G

APTGT50SK170T1G – Rev 1 October, 2012

www.microsemi.com

3

–

6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.40

R

thJC

Junction to Case Thermal Resistance

Diode

0.70

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 80 g

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

B

25/85

T

25

= 298.15 K 3952

K





























TT

B

R

T

11

exp

25

85/25

25

SP1 Package outline (dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGT50SK170T1G

APTGT50SK170T1G

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