6
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (°C)
1.71 1.73 1.75 1.77 1.79 1.81 1.83 1.85
Frequency (GHz)
1.71 1.73 1.75 1.77 1.79 1.81 1.83 1.85
Frequency (GHz)
1.71 1.73 1.75 1.77 1.79 1.81 1.83 1.85
Frequency (GHz)
1.71 1.73 1.75 1.77 1.79 1.81 1.83 1.85
Frequency (GHz)
1.71 1.73 1.75 1.77 1.79 1.81 1.83 1.85
Frequency (GHz)
90
95
100
105
110
Idd (mA)
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Gain (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
S22 (dB)
10
12
14
16
18
20
22
24
26
28
30
IIP3 (dBm)
-40
-35
-30
-25
-20
-15
-10
-5
0
S11 (dB)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
NF(dB)
85° C
25° C
-40° C
85° C
25° C
-40° C
85° C
25° C
-40° C
85° C
25° C
-40° C
85° C
25° C
-40° C
Typical Performance
RF performance at T
A
= 25° C, Vdd = 5 V for LNA mode, Vdd = 0 V for Bypass mode, measured on demo board in Figure 7.
Signal = CW unless stated otherwise. Application Test Circuit is shown in Figure 8 and Table 1. IIP3 test condition: F
RF1
-F
RF2
= 1 MHz with input power of -15 dBm per tone.
Figure 9. Idd vs Temperature Figure 10. Gain vs Frequency
Figure 11. S11 vs Frequency Figure 12. S22 vs Frequency
Figure 13. NF vs Frequency Figure 14. IIP3 vs Frequency
