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MGSF1N02LT1

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1996
October, 2016 − Rev. 7
1 Publication Order Number:
MGSF1N02LT1/D
MGSF1N02L, MVGSF1N02L
Power MOSFET
750 mAmps, 20 Volts
N−Channel SOT−23
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
• Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• MVGSF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 Vdc
Gate−to−Source Voltage − Continuous V
GS
± 20 Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
≤ 10 ms)
I
D
I
DM
750
2000
mA
Total Power Dissipation @ T
A
= 25°C P
D
400 mW
Operating and Storage Temperature Range T
J
, T
stg
− 55 to 150 °C
Thermal Resistance, Junction−to−Ambient
R
q
JA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
1
2
N−Channel
N2 = Device Code
M = Date Code*
G = Pb−Free Package
750 mAMPS, 20 VOLTS
R
DS(on)
= 90 mW
www.onsemi.com
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
SOT−23
CASE 318
STYLE 21
1
MARKING DIAGRAM/
PIN ASSIGNMENT
Device Package Shipping
†
ORDERING INFORMATION
MGSF1N02LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
Drain
1
Gate
2
Source
N2 M G
G
MVGSF1N02LT1G* SOT−23
(Pb−Free)
3000 / Tape &
Reel
MGSF1N02L, MVGSF1N02L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10 mAdc)
V
(BR)DSS
20 − − Vdc
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
V
GS(th)
1.0 1.7 2.4 Vdc
Static Drain−to−Source On−Resistance
(V
GS
= 10 Vdc, I
D
= 1.2 Adc)
(V
GS
= 4.5 Vdc, I
D
= 1.0 Adc)
r
DS(on)
−
−
0.075
0.115
0.090
0.130
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 5.0 Vdc) C
iss
− 125 − pF
Output Capacitance (V
DS
= 5.0 Vdc) C
oss
− 120 −
Transfer Capacitance (V
DG
= 5.0 Vdc) C
rss
− 45 −
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(V
DD
= 15 Vdc, I
D
= 1.0 Adc,
R
L
= 50 W)
t
d(on)
− 2.5 −
ns
Rise Time t
r
− 1.0 −
Turn−Off Delay Time t
d(off)
− 16 −
Fall Time t
f
− 8.0 −
Gate Charge (See Figure 6) Q
T
− 6000 − pC
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
I
S
− − 0.6 A
Pulsed Current I
SM
− − 0.75 −
Forward Voltage (Note 2) V
SD
− 0.8 − V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0
1.5
2
0.5
1
Figure 1. Transfer Characteristics
1 1.5 2 2.5 3
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
V
DS
= 10 V
T
J
= 150°C
25°C
-55°C
024 10
0
1.5
2
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
6
0.5
8
3
1
3.5
2.5
2.5
13 957
3.25 V
2.75 V
2.25 V
2.5 V
V
GS
= 3.0 V
4 V
3.5 V
MGSF1N02L, MVGSF1N02L
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 3. On−Resistance versus Drain Current
0 0.2 0.4 0.6 0.8
0.04
0.1
0.12
Figure 4. On−Resistance versus Drain Current
I
D
, DRAIN CURRENT (AMPS)
Figure 5. On−Resistance Variation with Temperature
0.6
1
0.001
0.1
1
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Charge
V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
I
D
, DIODE CURRENT (AMPS)
25°C
V
GS
= 4.5 V
V
GS
= 10 V
I
D
= 2 A
-55 -5 45 95 145
T
J
= 150°C
0.08
0.7
0.8
0.9
0 0.2 0.4 0.6
0.06
0.01
-55°C
25°C
0.8
Figure 8. Capacitance
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.4 0.8 1.2 1.6
0.04
0.1
0.12
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
0.08
0.06
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
10
6
2
0
Q
T
, TOTAL GATE CHARGE (pC)
8
4
1000 6000
V
DS
= 16 V
T
J
= 25°C
2000
I
D
= 2.0 A
3000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (Volts)
C, CAPACITANCE (pF)
01520510
C
iss
C
oss
C
rss
1000
100
V
GS
= 0 V
f = 1 MHz
T
J
= 25°C
10
0.1 0.3 0.5
0.7
150°C
-55°C
0.14
0.09
0.11
0.07
0.05
0.13
0.2 0.6 1 1.4
1.1
1.5
1.2
1.3
1.4
V
GS
= 4.5 V
I
D
= 1 A
50004000
1
0.9 1
0.18
0.2
0.16
0.14
1.8 2
25°C
150°C
-55°C
1.6
P1-P3P4-P4

MGSF1N02LT1

Mfr. #:
Buy MGSF1N02LT1
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 750mA N-Channel
Lifecycle:
New from this manufacturer.
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