IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1 18 30 S
C
iss
14.5 nF
C
oss
V
GS
= 0V, V
DS
= - 25V, f = 1MHz 565 pF
C
rss
105 pF
t
d(on)
32 ns
t
r
15 ns
t
d(off)
57 ns
t
f
12 ns
Q
g(on)
185 nC
Q
gs
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
66 nC
Q
gd
45 nC
R
thJC
0.42 °C/W
R
thCS
TO-220 0.50 °C/W
TO-247 &TO-3P 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V - 32 A
I
SM
Repetitive, Pulse Width Limited by T
JM
- 128 A
V
SD
I
F
= - 32A, V
GS
= 0V, Note 1 -1.3 V
t
rr
190 ns
Q
RM
1.7 μC
I
RM
-17.8 A
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
I
F
= -16A, -di/dt = -100A/μs
V
R
= -100V, V
GS
= 0V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
