OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPD5N25S3430ATMA1

P1-P3P4-P6P7-P9
IPD5N25S3-430
OptiMOS
™
-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C, V
GS
=10V
5 A
T
C
=100°C, V
GS
=10V
1)
4
Pulsed drain current
1)
I
D,pulse
T
C
=25°C
20
Avalanche energy, single pulse
1)
E
AS
I
D
=1.3A
13 mJ
Avalanche current, single pulse
I
AS
-
1.3 A
Reverse diode dv/dt dv /dt
6 kV/µs
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25°C
41 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
250
V
R
DS(on),max
430
mW
I
D
5 A
Product Summary
Type Package Marking
IPD5N25S3-430 PG-TO252-3- 3N25430
PG-TO252-3-313
Rev. 1.0 page 1 2012-10-18
IPD5N25S3-430
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
1)
Thermal resistance, junction - case
R
thJC
- - - 3.7 K/W
SMD version, device on PCB
R
thJA
minimal footprint - - 40
6 cm
2
cooling area
2)
- - 62
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
= 1mA
250 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=13µA
2.0 3.0 4.0
Zero gate voltage drain current
I
DSS
V
DS
=250V, V
GS
=0V,
T
j
=25°C
- 0.1 1 µA
V
DS
=250V, V
GS
=0V,
T
j
=125°C
2)
- 10 100
Gate-source leakage current
I
GSS
V
GS
=20V, V
DS
=0V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V, I
D
=5A
- 370 430
mW
Values
Rev. 1.0 page 2 2012-10-18
IPD5N25S3-430
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
1)
Input capacitance
C
iss
- 317 422 pF
Output capacitance
C
oss
- 117 156
Reverse transfer capacitance
C
rss
- 6 13
Turn-on delay time
t
d(on)
- 3 - ns
Rise time
t
r
- 2 -
Turn-off delay time
t
d(off)
- 8 -
Fall time
t
f
- 5 -
Gate Charge Characteristics
1), 3)
Gate to source charge
Q
gs
- 1.5 2 nC
Gate to drain charge
Q
gd
- 1.3 2.7
Gate charge total
Q
g
- 4.7 6.2
Gate plateau voltage
V
plateau
- 4.7 - V
Reverse Diode
Diode continous forward current
1)
I
S
- - 5 A
Diode pulse current
1)
I
S,pulse
- - 20
Diode forward voltage
V
SD
V
GS
=0V, I
F
=5A,
T
j
=25°C
- 0.9 1.2 V
Reverse recovery time
1)
t
rr
V
R
=125V, I
F
=5A,
di
F
/dt=100A/µs
- 70 - ns
Reverse recovery charge
1)
Q
rr
- 159 - nC
3)
Devices thermal performance determined according to EIA JESD 51-14
"Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance"
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
T
C
=25°C
1)
Defined by design. Not subject to production test.
Values
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=125V, V
GS
=10V,
I
D
=5A, R
G
=3.5W
V
DD
=200V, I
D
=5A,
V
GS
=0 to 10V
Rev. 1.0 page 3 2012-10-18
P1-P3P4-P6P7-P9

IPD5N25S3430ATMA1

Mfr. #:
Buy IPD5N25S3430ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH TO252-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet