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MJW18020G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 3
1 Publication Order Number:
MJW18020/D
MJW18020
NPN Silicon Power
Transistors High Voltage
Planar
The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.
Features
• High and Excellent Gain Linearity
• Fast and Very Tight Switching Times Parameters t
si
and t
fi
• Very Stable Leakage Current due to the Planar Structure
• High Reliability
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage V
CEO
450 Vdc
Collector−Emitter Breakdown Voltage V
CES
1000 Vdc
Collector−Base Voltage V
CBO
1000 Vdc
Emitter−Base Voltage V
EBO
9.0 Vdc
Collector Current − Continuous
− Peak (Note 1)
I
C
30
45
Adc
Base Current − Continuous
− Peak (Note 1)
I
B
6.0
10
Adc
Total Power Dissipation @ T
C
= 25_C
Derate Above 25_C
P
D
250
2.0
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.5
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
50
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
T
L
275
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJW18020 TO−247 30 Units/Rail
30 AMPERES
1000 VOLTS BV
CES
450 VOLTS BV
CEO,
250 WATTS
http://onsemi.com
MJW18020G TO−247
(Pb−Free)
30 Units/Rail
TO−247
CASE 340L
2
1
3
MARKING DIAGRAM
MJW18020
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER
MJW18020
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
450 − − Vdc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, I
B
= 0)
I
CEO
− − 100
mAdc
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0)
(T
C
= 125°C)
I
CES
− − 100
500
mAdc
Emitter Cutoff Current
(V
CE
= 9 Vdc, I
C
= 0)
I
EBO
− − 100
mAdc
ON CHARACTERISTICS
DC Current Gain (I
C
= 3 Adc, V
CE
= 5 Vdc)
(T
C
= 125°C)
(I
C
= 10 Adc V
CE
= 2 Vdc)
(T
C
= 125°C)
(I
C
= 20 Adc V
CE
= 2 Vdc)
(T
C
= 125°C)
(I
C
= 10 mAdc V
CE
= 5 Vdc)
h
FE
14
−
8
5
5.5
4
14
30
16
14
9
7
25
34
−
−
−
−
−
Base−Emitter Saturation Voltage (I
C
= 10 Adc, I
B
= 2 Adc)
(I
C
= 20 Adc, I
B
= 4 Adc)
V
BE(sat)
− 0.97
1.15
1.25
1.5
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 2 Adc)
(T
C
= 125°C)
(I
C
= 20 Adc, I
B
= 4 Adc)
(T
C
= 125°C)
V
CE(sat)
−
−
−
−
0.2
0.3
0.5
0.9
0.6
−
1.5
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
− 13 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− 300 500 pF
Input Capacitance
(V
EB
= 8.0)
C
ib
− 7000 9000 pF
SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 ms)
Turn−On Time
(I
C
= 10 Adc, I
B1
= I
B2
= 2 Adc,
Vcc = 125 V)
t
On
− 540 750 ns
Storage Time t
s
− 4.75 6
ms
Fall Time t
f
− 380 500 ns
Turn−Off Time t
Off
− 5.2 6.5
ms
Turn−On Time
(I
C
= 20 Adc, I
B1
= I
B2
= 4 Adc,
Vcc = 125 V)
t
On
− 965 1200 ns
Storage Time t
s
− 2.9 3.5
ms
Fall Time t
f
− 350 500 ns
Turn−Off Time t
Off
− 3.25 4
ms
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V , Vcc = 15 V, L = 200 mH)
Fall Time
(I
C
= 10 Adc, I
B1
= I
B2
= 2 Adc)
t
fi
− 142 250 ns
Storage Time
t
si
− 4.75 6
ms
Crossover Time
t
c
− 320 500 ns
Fall Time
(I
C
= 20 Adc, I
B1
= I
B2
= 4 Adc)
t
fi
− 350 500 ns
Storage Time
t
si
− 3.0 3.5
ms
Crossover Time
t
c
− 500 750 ns
MJW18020
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain, V
CE
= 2.0 V
0.01 0.1 1.0 10
1.0
10
100
100
0.0
0.1
1.0
10.0
100.0
0.001 0.01 0.1 1.0 10 10
0
0.1
1.0
10.0
0.001 0.01 0.1 1.0 10 100
0.01 0.1 1.0 10
1.0
10
100
100
Figure 2. DC Current Gain, V
CE
= 5.0 V
0.1
1.0
10.0
0.001 0.01 0.1 1.0 10 10
0
0.0
0.1
1.0
10.0
100.0
0.001 0.01 0.1 1.0 10 100
Figure 3. Typical Collector−Emitter Saturation
Voltage, I
C
/I
B
= 5.0
Figure 4. Typical Collector−Emitter Saturation
Voltage, I
C
/I
B
= 10
Figure 5. Typical Base−Emitter Saturation
Voltage, I
C
/I
B
= 5.0
Figure 6. Typical Base−Emitter Saturation
Voltage, I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
H
FE
, DC CURRENT GAIN
H
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
CE
, VOLTAGE (VOLTS)
V
CE
, VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (A)
V
BE
, VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (A)
V
BE
, VOLTAGE (VOLTS)
T
J
= 25°C
T
J
= −20°C
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
T
J
= 125°C
I
c
/I
b
= 10I
c
/I
b
= 5.0
V
CE
= 2.0 V V
CE
= 5.0 V
T
J
= 25°C
I
c
/I
b
= 10I
c
/I
b
= 5.0
T
J
= −20°C
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
T
J
= 125°C
P1-P3P4-P5

MJW18020G

Mfr. #:
Buy MJW18020G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 30A 450V 250W NPN
Lifecycle:
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