JAN2N5680

TECHNICAL DATA

PNP POWER TRANSISTOR SILICON AMPLIFIER

Qualified per MIL-PRF-19500/582

Devices Qualified Level

2N5679 2N5680

JAN

JANTX

JANTXV

MAXIMUM RATINGS (T

A

= 25

0

C unless otherwise noted)

Ratings Symbol

2N5679 2N5680 Unit

Collector-Emitter Voltage

V

CEO

100 120 Vdc

Collector-Base Voltage

V

CBO

100 120 Vdc

Emitter-Base Voltage

V

EBO

4.0 4.0 Vdc

Collector Current

I

C

1.0 1.0 Adc

Base Current

I

B

0.5 0.5 Adc

Total Power Dissipation @ T

A

= +25

0

C

(1)

@ T

C

= +25

0

C

(2)

P

T

1.0

10

1.0

10

W

W

Operating & Storage Temperature Range

T

op

,

T

stg

-65 to +200

-65 to +200

°C

THERMAL CHARACTERISTICS

Characteristics Symbol Max. Unit

Thermal Resistance, Junction-to-Case

R

θJC

17.5

0

C

1) Derate linearly 5.7 mW/

0

C for T

A

> +25

0

C

2) Derate linearly 57 mW/

0

C for T

C

> +25

0

C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 10 mAdc 2N5679

2N5680

V(BR)CEO

100

120

Vdc

Emitter-Base Cutoff Current

V

EB

= 4.0 Vdc

I

EBO

1.0

µAdc

Collector-Emitter Cutoff Current

V

CE

= 70 Vdc 2N5679

V

CE

= 80 Vdc 2N5680

I

CEO

10

µAdc

Collector-Emitter Cutoff Current

V

BE

= 1.5 Vdc

V

CE

= 100 Vdc 2N5679

V

CE

= 120 Vdc 2N5680

I

CEX

100 nAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

TO-39*

(TO-205AD)

2N5679, 2N5680 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS

Forward Current Transfer Ratio

I

C

= 250 mAdc, V

CE

= 2.0 Vdc

I

C

= 500 mAdc, V

CE

= 2.0 Vdc

I

C

= 1.0 Adc, V

CE

= 2.0 Vdc

h

FE

40

20

5

150

Collector-Emitter Saturation Voltage

I

C

= 250 mAdc, I

B

= 25 mAdc

I

C

= 500 mAdc, I

B

= 50 mAdc

V

CE(sat)

0.6

1.0

Vdc

Base-Emitter Saturation Voltage

I

C

= 250 mAdc, I

B

= 25 mAdc

I

C

= 500 mAdc, I

B

= 50 mAdc

V

BE(sat)

1.1

1.3

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal

Short Circuit Forward-Current Transfer Ratio

I

C

= 0.1 Adc, V

CE

= 10 Vdc, f = 10 kHz

h

fe



3.0

Small Signal Short Circuit Forward-Current

Transfer Ratio

I

C

= 0.2 Adc, V

CE

= 1.5 Vdc, f = 1.0 kHz

h

fe

40

Output Capacitance

V

CB

= 20 Vdc, I

E

= 0, f = 1 MHz

C

obo

50 pF

SAFE OPERATING AREA

DC Tests

T

C

= +25

0

C, 1 Cycle, t ≥ 0.5 s

Test 1

V

CE

= 2 Vdc, I

C

= 1.0 Adc

Test 2

V

CE

= 10 Vdc, I

C

= 1.0 Adc

Test 3

V

CE

= 90 Vdc, I

C

= 50 mAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

JAN2N5680

Mfr. #:

Manufacturer:

Microchip / Microsemi

Description:

Bipolar Transistors - BJT Power BJT

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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