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RMPA2453

P1-P3P4-P6P7-P9P10-P10
©2004 Fairchild Semiconductor Corporation
July 2004
RMPA2453 Rev. D
RMPA2453
VOLTAGE
DETECTOR
BIAS
OUTPUT
MATCH
12
8
INPUT
MATCH
INT STG
MATCH
N/C
11
RF OUT
10
RF OUT
9
1
2
3
4
N/C
V
L
RF IN
RF IN
N/C
VC2
7
VDET
6
VDET REF
5
13141516
VM12
N/C
N/C
N/C
VC1
Backside Ground
RMPA2453
2.4–2.5 GHz InGaP HBT Linear Power Amplifier
General Description
The RMPA2453 power amplifier is designed for high
performance WLAN applications in the 2.4–2.5 GHz
frequency band. The low profile 16 pin 3 x 3 x 0.9 mm
package with internal matching on both input and output to
50
Ω
minimizes next level PCB space and allows for
simplified integration. The on-chip detector provides power
sensing capability while the logic control provides power
saving shutdown options. The PA’s low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Features
• 26dB small signal gain
• 26.5dBm output power @ 1dB compression
• 2.5% EVM at 18dBm modulated output power
• 3.5% EVM at 19dBm modulated output power
• 3.3V single positive supply operation
• Two power saving shutdown options (bias and logic
control)
• Integrated power detector with 20dB dynamic range
• Low profile 16 pin 3 x 3 x 0.9 mm leadless package
• Internally matched to 50
Ω
and DC blocked RF input/
output
• Optimized for use in 802.11b/g applications
Device
Functional Block Diagram
Pin Description
1V
L
(logic)
2 RF IN
3 RF IN
4 N/C
5 VC1
6 N/C
7 N/C
8 N/C
9 N/C
10 RF OUT
11 RF OUT
12 N/C
13 VC2
14 VDET
15 VDET REF
16 VM12
©2004 Fairchild Semiconductor Corporation RMPA2453 Rev. D
RMPA2453
Absolute Ratings
1
Notes:
1:
No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values
Electrical Characteristics
1, 3
802.11g OFDM Modulation (RF framed with 176ms burst time 100ms
idle time) 54Mbps Data Rate 16.7MHz Bandwidth
Electrical Characteristics
3, 6
802.11b CCK Modulation (RF not framed) 11Mbps Data Rate
22.0MHz Bandwidth
Notes:
1:
VC1,VC2, VM12 = 3.3V, T
C
= 25°C, PA is constantly biased, 50
Ω
system.
2:
Percentage includes system noise floor of EVM = 0.8%.
3:
EVM not measured 100% in production.
4:
P
OUT
measured at P
IN
corresponding to power detection threshold.
5:
Measured at P
IN
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6:
VC1,VC2, VM12 = 3.3V, T
C
= 25°C, P
OUT
= +23dBm, 50
Ω
system. Satisfies spectral mask.
7:
P
IN
is adjusted to point where spectral performance reaches maximum limit.
Symbol Parameter Ratings Units
VC1, VC2 Positive Supply Voltage 5 V
IC1, IC2 Supply Current
IC1
IC2
120
700
mA
mA
VM12 Positive Bias Voltage 4.0 V
V
L
Logic Voltage 5 V
P
IN
RF Input Power 10 dBm
T
CASE
Case Operating Temperature -40 to +85 °C
T
STG
Storage Temperature -55 to +150 °C
Parameter Min Typ Max Units
Frequency 2.4 2.5 GHz
Supply Voltage 3.0 3.3 3.6 V
Gain 24.5 26 29 dB
Total Current @ 18dBm P
OUT
133 160 mA
Total Current @ 19dBm P
OUT
145 165 mA
EVM @ 18dBm P
OUT
2
2.5 3.5
3
%
EVM @ 19dBm P
OUT
2
3.5 4.5
3
%
Detector Output @ 19dBm P
OUT
515 600 mV
Detector Threshold
4
5.0 7.0 dBm
P
OUT
Spectral Mask Compliance
5
21.0 dBm
Parameter Min Typ Max Units
Frequency 2.4 2.5 GHz
Supply Voltage 3.0 3.3 3.6 V
Gain 24.5 26 29 dB
Total Current 250 mA
First Sidelobe Power -35 dBc
Second Sidelobe Power -55 dBc
Max P
OUT
Spectral Mask Compliance
7
24.0 dBm
©2004 Fairchild Semiconductor Corporation RMPA2453 Rev. D
RMPA2453
Electrical Characteristics
1
Single Tone
Notes:
1:
VC1,VC2, VM12 = 3.3V, T
C
= 25°C, 50
Ω
system.
2:
Bias current is included in the Total Quiescent Current.
3:
VL is set to Input Logic Level High for PA Off operation.
4:
Measured from Device On signal turn on (Logic Low) to the point where RF P
OUT
stabilizes to 0.5dB.
5:
Load VSWR is set to 8:1 and the angle is varied 360 degrees. P
OUT
= -30dBm to P1dB.
Parameter Min Typ Max Units
Frequency 2.4 2.5 GHz
Supply Voltage 3.0 3.3 3.6 V
Gain 24.5 26 29 dB
Total Quiescent Current 105 135 mA
Bias Current at pin VM12
2
10.0 12.5 15.0 mA
P1dB Compression 25 26.5 dBm
Standby Current
3
0.7 mA
Shutdown Current (VM12 = 0V) <1.0 µA
Input Return Loss 19 dB
Output Return Loss 22 dB
Detector Output at P1dB Comp 2.0 V
Detector P
OUT
Threshold 7.0 9.0 dBm
2nd Harmonic Output at P1dB -45 dBc
3rd Harmonic Output at P1dB -42 dBc
Logic
Shutdown Control (V
L
):
Device Off, Logic High Input 2.0 2.4 V
Device On, Logic Low Input 0.0 0.8 V
Logic Current 150 µA
Turn-on Time
4
<1 µS
Turn-off Time <1 µS
Spurious (Stability)
5
-65 dBc
P1-P3P4-P6P7-P9P10-P10

RMPA2453

Mfr. #:
Buy RMPA2453
Manufacturer:
ON Semiconductor / Fairchild
Description:
RF Amplifier 2.4-2.5 GHz InGaP HBT Linear Power Amp
Lifecycle:
New from this manufacturer.
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