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DMN6068LK3-13

P1-P3P4-P6P7-P8
DMN6068LK3
Document Number DS32057 Rev 4 - 2
1 of 8
www.diodes.com
May 2013
© Diodes Incorporated
DMN6068LK3
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= +25
°
C
60V
68mΩ @ V
GS
= 10V
8.5A
100mΩ @ V
GS
= 4.5V
7.0A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Motor Control
• Transformer Driving Switch
• DC-DC Converters
• Power Management Functions
• Uninterrupted Power Supply
Features and Benefits
• 100% Unclamped Inductive Switch (UIS) test in production
• Low on-resistance
• Fast switching speed
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TO252
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN6068LK3-13 N6068L 13 16 2,500
Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
TOP VIEW
PIN OUT -TOP VIEW
D
S
G
Equivalent Circuit
G S
D
D
= Manufacturer’s Marking
N6068L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
YYWW
N6068L
TO252-3L
Green
DMN6068LK3
Document Number DS32057 Rev 4 - 2
2 of 8
www.diodes.com
May 2013
© Diodes Incorporated
DMN6068LK3
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Symbol
Value
Unit
Drain-Source voltage
V
DSS
60 V
Gate-Source voltage (Note 5)
V
GS
±20
V
Single Pulsed Avalanche Energy (Note 11)
E
AS
37.5 mJ
Single Pulsed Avalanche Current (Note 11)
I
AS
5.0 A
Continuous Drain current
V
GS
= 10V
(Note 7)
I
D
8.5
A
T
A
= 70°C (Note 7)
6.8
(Note 6) 6.0
Pulsed Drain current
V
GS
= 10V
(Note 8)
I
DM
22.2 A
Continuous Source current (Body diode) (Note 7)
I
S
10.2 A
Pulsed Source current (Body diode) (Note 8)
I
SM
22.2 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 6)
P
D
4.12
33
W
mW/°C
(Note 7)
8.49
67.9
(Note 9)
2.12
16.9
Thermal Resistance, Junction to Ambient
(Note 6)
R
θ
JA
30.3
°C/W
(Note 7) 14.7
(Note 9) 59.0
Thermal Resistance, Junction to Lead (Note 10)
R
θ
JL
3.09
Operating and storage temperature range
T
J
, T
STG
-55 to +150
°C
Notes: 5. AEC-Q101 V
GS
maximum is ±16V.
6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note 2, except the device is measured at t ≤ 10 sec.
8. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, I
AS
= 5.0A, R
G
= 25• , V
DD
= 50V, starting T
J
= 25°C
DMN6068LK3
Document Number DS32057 Rev 4 - 2
3 of 8
www.diodes.com
May 2013
© Diodes Incorporated
DMN6068LK3
Thermal Characteristics
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
1 10
100m
1
10
1 10
100m
1
10
T
amb
=25°C
25mm x 25mm
1oz FR4
R
DS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
5
10
15
20
25
30
35
T
amb
=25°C
25mm x 25mm
1oz FR4
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
Safe Operating Area
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
T
amb
=25°C
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Pulse Width (s)
Thermal Resistance (°C/W)
T
amb
=25°C
50mm x 50mm
2oz FR4
100µs
1ms
10ms
100ms
1s
DC
R
DS(on)
Limited
V
DS
Drain-Source Voltage (V)
I
D
Drain Current (A)
P1-P3P4-P6P7-P8

DMN6068LK3-13

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