DMP3036SSS-13 Datasheet DMP3036SSS-13 | P1-P3

DMP3036SSS

Document number: DS36460 Rev. 3 - 2

1 of 6

www.diodes.com

April 2015

DMP3036SSS

NEW PROD UCT

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(on) max

I

D

T

C

= +25°C

-30V

20mΩ @ V

GS

= -10V

-19.5A

29mΩ @ V

GS

= -5V

-16.2A

Description

This new generation MOSFET is designed to minimize the on-state

resistance (R

DS(on)

) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

Applications

 DC-DC Converters

 Power Management Functions

 Backlighting

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Weight: 0.076 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMP3036SSS-13

SO-8

2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

= Manufacturer’s Marking

P3036SS = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 14 = 2014)

WW = Week (01 - 53)

1

4

8

5

P

3036

SS

WW

YY

SO-8

Equivalent Circuit

D

S

G

Top View

SO-8

Top View

Pin Configuration

S

D

S

D

G

S

D

Pin1

SO-8

DMP3036SSS

Document number: DS36460 Rev. 3 - 2

2 of 6

www.diodes.com

April 2015

DMP3036SSS

NEW PROD UCT

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

-30

V

Gate-Source Voltage

V

GSS

±25

V

Continuous Drain Current (Note 5) V

GS

= -10V

T

C

= +25°C

T

C

= +70°C

I

D

-19.5

-15.6

A

T

A

= +25°C

T

A

= +70°C

I

D

-11.4

-9.2

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

I

DM

-80

A

Maximum Continuous Body Diode Forward Current (Note 6)

I

S

-3.6

A

Avalanche Current (Note 7) L = 0.3mH

I

AS

-17.5

A

Avalanche Energy (Note 7) L = 0.3mH

E

AS

64

mJ

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

T

A

= +25°C

P

D

1.4

W

T

A

= +70°C

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

R



JA

88

°C/W

t<10s

37

Total Power Dissipation (Note 6)

T

A

= +25°C

P

D

1.9

W

T

A

= +70°C

1.2

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

R

θJA

65

°C/W

t<10s

32

Thermal Resistance, Junction to Case (Note 6)

R

θJC

11

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

-30

-

V

GS

= 0V, I

D

= -1mA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

-

-1.0

μA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-

±100

nA

V

GS

= ±25V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

-1.0

-1.7

-3.0

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

16

20

mΩ

V

GS

= -10V, I

D

= -9A

22

29

V

GS

= -5V, I

D

= -7A

Diode Forward Voltage

V

SD

-

-0.7

-1.0

V

GS

= 0V, I

S

= -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

-

1931

-

pF

V

DS

= -15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

-

226

-

pF

Reverse Transfer Capacitance

C

rss

-

168

-

pF

Gate Resistance

R

g

-

10.9

-

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge at (V

GS

= -5V)

Q

g

-

8.8

-

nC

V

DS

= -15V, I

D

= -10A

Total Gate Charge at (V

GS

= -10V)

Q

g

-

16.5

-

nC

V

DS

= -15V, I

D

= -10A

Gate-Source Charge

Q

gs

-

2.6

-

nC

Gate-Drain Charge

Q

gd

-

3.6

-

nC

Turn-On Delay Time

t

D(on)

-

8.2

-

ns

V

GEN

= -10V, V

DD

= -15V,

R

GEN

= 3Ω, I

D

= -10A

Turn-On Rise Time

t

r

-

14

-

ns

Turn-Off Delay Time

t

D(off)

-

65

-

ns

Turn-Off Fall Time

t

f

-

31.6

-

ns

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMP3036SSS

Document number: DS36460 Rev. 3 - 2

3 of 6

www.diodes.com

April 2015

DMP3036SSS

NEW PROD UCT

Figure 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

I , DRAIN CURRENT (A)

d

V = -3.0V

GS

0

5

10

15

20

25

30

0 1 2 3 4 5

V = -4.0V

GS

V = -2.0V

GS

V = -2.5V

GS

V = -3.5V

GS

V = -5.0V

GS

V = -4.5V

GS

V = -10.0V

GS

Figure 2 Typical Transfer Characteristics

V , GATE-SOURCE VOLTAGE (V)

GS

I , DRAIN CURRENT (A)

D

0

5

10

15

20

25

30

0 1 2 3 4 5

T = 25°C

A

T = -55°C

A

T = 85°C

A

T = 125°C

A

T =150°C

A

V = 5.0V

DS

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT

D

0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

0.022

0.024

0.026

0.028

0.03

0 5 10 15 20 25 30

V = 10.0V

GS

V = 5.0V

GS

V = 20.0V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Transfer Characteristics

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

0 5 10 15 20 25

I = -5.0A

D

I = -10.0A

D

I = -11.0A

D

I , DRAIN CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0 5 10 15 20 25 30

V = 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

T = 125°C

A

T , JUNCTION TEMPERATURE ( C)

J



Figure 6 On-Resistance Variation with Temperature

R , DRAIN-SOURCE

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

V = -20.0V

GS

I = -10.0A

D

V = -5.0V

GS

I = -3.0A

D

V = -10.0V

GS

I = -5.0A

D

DMP3036SSS-13

DMP3036SSS-13

Products related to this Datasheet