STTH302RL

1/5

STTH302

®

November 2001 - Ed: 1A

HIGH EFFICIENCY ULTRAFAST DIODE

DO-201AD

STTH302

■

Very low conduction losses

■

Negligible switching losses

■

Low forward and reverse recovery times

■

High junction temperature

FEATURES AND BENEFITS

The STTH302 which is using ST's new 200V

planar technology, is specially suited for switching

mode base drive & transistor circuits.

The device is also intended for use as a free

wheeling diode in power supplies and other power

switching applications.

DESCRIPTION

Symbol Parameter Value Unit

V

RRM

Repetitive peak reverse voltage

200 V

I

F (AV)

Average forward current TI = 107°C δ = 0.5

3A

I

FSM

Surge non repetitive forward current t

p

= 10ms Sinusoidal

130 A

T

stg

Storage temperature range

-65to+175 °C

Tj

Maximum operating junction temperature

175 °C

ABSOLUTE RATINGS (limiting values)

I

F(AV)

3A

V

RRM

200 V

Tj (max) 175 °C

V

F

(max) 0.75 V

trr (max) 35 ns

MAIN PRODUCT CHARACTERISTICS

Symbol Parameter Value Unit

Rth (j-a)

Junction-ambient*

25 °C/W

* On infinite heatsink with 10mm lead length.

THERMAL PARAMETERS

STTH302

2/5

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

R

*

Reverse leakage current T

j

= 25°C V

R

=V

RRM

3 µA

T

j

= 125°C

475

V

F

**

Forward voltage drop T

j

= 25°C I

F

=3A

0.95 V

T

j

= 125°C

0.66 0.75

Pulse test:*tp=5ms,δ<2%

** tp = 380 µs, δ <2%

To evaluate the maximum conduction losses use the following equations:

P=0.60xI

F(AV)

+ 0.05 I

F

2

(RMS)

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery

time

I

F

=1A dI

F

/dt = - 50A/µs

V

R

= 30V

T

j

= 25°C

35 ns

tfr Forward recovery

time

I

F

=3A dI

F

/dt = 50A/µs

V

FR

=1.1xV

F

max

T

j

= 25°C

70 ns

V

FP

Forward recovery

voltage

T

j

= 25°C

1.6 V

DYNAMIC ELECTRICAL CHARACTERISTICS

STTH302

3/5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

IF(av)(A)

T

δ

=tp/T

tp

PF(av)(W)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

Fig. 1: Average forward power dissipation versus

average forward current.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 25 50 75 100 125 150 175

Tamb(°C)

Rth(j-a)=Rth(j-l)

Rth(j-a)=75°C/W

IF(av)(A)

Fig. 2: Average forward current versus ambient

temperature (δ=0.5).

0

10

20

30

40

50

60

70

80

90

5 10152025

Lleads(mm)

Rth(j-a)

Rth(j-l)

Rth(°C/W)

Fig. 3: Thermal resistance versus lead length.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

T

δ

=tp/T

tp

Zth(j-a)/Rth(j-a)

Fig. 4: Relative variation of thermal impedance

junction ambient versus pulse duration (printed

circuit board epoxy FR4, LIeads = 10mm).

10

100

1 10 100 1000

VR(V)

F=1MHz

Vosc=30mV

Tj=25°C

C(pF)

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values).

0.1

1.0

10.0

100.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VFM(V)

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

IFM(A)

Fig. 5: Forward voltage drop versus forward

current.

STTH302RL

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Rectifiers 3.0 Amp 200 Volt

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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