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MMBT6520LT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 7
1 Publication Order Number:
MMBT6520LT1/D
MMBT6520L,
NSVMMBT6520L
High Voltage Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−350 Vdc
Collector−Base Voltage V
CBO
−350 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Base Current I
B
−250 mA
Collector Current − Continuous I
C
−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2Z M G
G
2Z = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping
†
ORDERING INFORMATION
MMBT6520LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
MMBT6520LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NSVMMBT6520LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
www.onsemi.com
MMBT6520L, NSVMMBT6520L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −1.0 mA)
V
(BR)CEO
−350 − Vdc
Collector−Base Breakdown Voltage
(I
C
= −100 mA)
V
(BR)CBO
−350 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mA)
V
(BR)EBO
−5.0 − Vdc
Collector Cutoff Current
(V
CB
= −250 V)
I
CBO
− −50 nA
Emitter Cutoff Current
(V
EB
= −4.0 V)
I
EBO
− −50 nA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −1.0 mA, V
CE
= −10 V)
(I
C
= −10 mA, V
CE
= −10 V)
(I
C
= −30 mA, V
CE
= −10 V)
(I
C
= −50 mA, V
CE
= −10 V)
(I
C
= −100 mA, V
CE
= −10 V)
h
FE
20
30
30
20
15
−
−
200
200
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −1.0 mA)
(I
C
= −20 mA, I
B
= −2.0 mA)
(I
C
= −30 mA, I
B
= −3.0 mA)
(I
C
= −50 mA, I
B
= −5.0 mA)
V
CE(sat)
−
−
−
−
−0.30
−0.35
−0.50
−1.0
Vdc
Base−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −1.0 mA)
(I
C
= −20 mA, I
B
= −2.0 mA)
(I
C
= −30 mA, I
B
= −3.0 mA)
V
BE(sat)
−
−
−
−0.75
−0.85
−0.90
Vdc
Base−Emitter On Voltage
(I
C
= −100 mA, V
CE
= −10 V)
V
BE(on)
− −2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −20 V, f = 20 MHz)
f
T
40 200 MHz
Collector−Base Capacitance
(V
CB
= −20 V, f = 1.0 MHz)
C
cb
− 6.0 pF
Emitter−Base Capacitance
(V
EB
= −0.5 V, f = 1.0 MHz)
C
eb
− 100 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MMBT6520L, NSVMMBT6520L
www.onsemi.com
3
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
h
FE
, DC CURRENT GAIN
200
100
20
30
50
70
V
CE
= 10 V
T
J
= 125°C
25°C
-55°C
Figure 2. Current−Gain — Bandwidth Product
Figure 3. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
100
20
30
50
70
f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
T
10
T
J
= 25°C
V
CE
= 20 V
f = 20 MHz
I
C
, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
V, VOLTAGE (VOLTS)
1.4
1.2
0
0.6
0.8
1.0
0.4
0.2
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 5.0
I
C
, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2.5
R
V
, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
R
q
VC
for V
CE(sat)
R
q
VB
for V
BE
25°C to 125°C
-55°C to 25°C
-55°C to 125°C
I
C
I
B
 + 10
Figure 4. Temperature Coefficients
V
R
, REVERSE VOLTAGE (VOLTS)
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
100
2.0
3.0
5.0
70
1.0
C, CAPACITANCE (pF)
7.0
10
20
30
50
T
J
= 25°C
C
cb
C
eb
Figure 5. Capacitance
I
C
, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
t, TIME (ns)
1.0k
20
10
30
50
70
100
200
300
500
700
t
d
@ V
BE(off)
= 2.0 V
t
r
V
CE(off)
= 100 V
I
C
/I
B
= 5.0
T
J
= 25°C
Figure 6. Turn−On Time
P1-P3P4-P5

MMBT6520LT1G

Mfr. #:
Buy MMBT6520LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 350V PNP
Lifecycle:
New from this manufacturer.
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