1999 Dec 03 3
NXP Semiconductors Product specification
General purpose PIN diode BAP50-04
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per diode
V
F
forward voltage I
F
=50mA 0.95 1.1 V
V
R
reverse voltage I
R
=10A50V
I
R
reverse current V
R
=50V 100 nA
C
d
diode capacitance V
R
=0; f=1MHz 0.45 pF
V
R
=1V; f=1MHz 0.35 0.6 pF
V
R
=5V; f=1MHz 0.3 0.5 pF
r
D
diode forward resistance I
F
= 0.5 mA; f = 100 MHz; note 1 25 40
I
F
= 1 mA; f = 100 MHz; note 1 14 25
I
F
=10mA; f=100MHz; note1 35
L
charge carrier life time when switched from I
F
10 mA to I
R
6mA;
R
L
100 ; measured at I
R
3mA
1.05 s
L
S
series inductance 1.4 nH
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 220 K/W
