OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BSP135H6327XTSA1

P1-P3P4-P6P7-P9
BSP135
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
0.12 A
T
A
=70 °C
0.10
Pulsed drain current
I
D,pulse
T
A
=25 °C
0.48
Reverse diode dv/dt dv /dt
I
D
=0.12 A, V
DS
=20 V,
di/dt=200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
ESD Class
(JESD22-A114-HBM)
1A(>250V,<500V)
Power dissipation
P
tot
T
A
=25 °C
1.8 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1)
see table on next page and diagram 11
Value
V
DS
600
V
R
DS(on),max
60
I
DSS,min
0.02
A
Product Summary
PG-SOT223
Type
Package
Tape and Reel Information
Marking
Packaging
BSP135
PG-SOT223
L6327: 1000 pcs/reel
BSP135
Non dry
BSP135
PG-SOT223
L6906: 1000 pcs/reel
BSP135
Non dry
Type
Package
Tape and Reel Information
Marking
Packaging
BSP135
PG-SOT223
H
6327: 1000 pcs/reel
BSP135
Non dry
BSP135
PG-SOT223
H
6906: 1000 pcs/reel
sorted in V
GS(th)
bands1)
BSP135
Non dry
Rev. 1.33
page 1
2012-11-29
•
HalogenfreeaccordingtoIEC61249221
BSP135
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4)
R
thJS
- - 25 K/W
SMD version, device on PCB
R
thJA
minimal footprint - - 115
6 cm
2
cooling area
2)
- - 70
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=-3 V, I
D
=250 µA
600 - - V
Gate threshold voltage
V
GS(th)
V
DS
=3 V, I
D
=94 µA
-2.1 -1.4 -1
Drain-source cutoff current
I
D(off)
V
DS
=600 V,
V
GS
=-3 V, T
j
=25 °C
- - 0.1 µA
V
DS
=600 V,
V
GS
=-3 V, T
j
=125 °C
- - 10
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 100 nA
On-state drain current
I
DSS
V
GS
=0 V, V
DS
=10 V
20 - - mA
Drain-source on-state resistance
R
DS(on)
V
GS
=0 V, I
D
=0.01A
- 30 60
W
V
GS
=10 V, I
D
=0.12 A
- 25 45
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.1 A
0.08 0.16 - S
Threshold voltage V
GS(th)
sorted in bands
3)
J
V
GS(th)
V
DS
=3 V, I
D
=94 µA
-1.2 - -1 V
K -1.35 - -1.15
L -1.5 - -1.3
M -1.65 - -1.45
N -1.8 - -1.6
drain connection. PCB is vertical in still air.
3)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Values
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(single layer, 70 µm thick) copper area for
Rev. 1.33
page 2
2012-11-29
BSP135
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 98 146 pF
Output capacitance
C
oss
- 8.5 13
Reverse transfer capacitance
C
rss
- 3.4 5.1
Turn-on delay time
t
d(on)
- 5.4 8.1 ns
Rise time
t
r
- 5.6 8.4
Turn-off delay time
t
d(off)
- 28 42
Fall time
t
f
- 182 273
Gate Charge Characteristics
Gate to source charge
Q
gs
- 0.24 0.36 nC
Gate to drain charge
Q
gd
- 2.0 3.0
Gate charge total
Q
g
- 3.7 4.9
Gate plateau voltage
V
plateau
- 0.20 - V
Reverse Diode
Diode continous forward current
I
S
- - 0.12 A
Diode pulse current
I
S,pulse
- - 0.48
Diode forward voltage
V
SD
V
GS
=-3 V, I
F
=0.12 A,
T
j
=25 °C
- 0.78 1.2 V
Reverse recovery time
t
rr
- 87 130 ns
Reverse recovery charge
Q
rr
- 70 104 nC
V
R
=300 V, I
F
=0.1 A,
di
F
/dt=100 A/µs
T
A
=25 °C
Values
V
GS
=-3 V, V
DS
=25 V,
f=1 MHz
V
DD
=300 V,
V
GS
=-3...5 V,
I
D
=0.1 A, R
G
=6 W
V
DD
=400 V, I
D
=0.1 A,
V
GS
=-3 to 5 V
Rev. 1.33
page 3
2012-11-29
P1-P3P4-P6P7-P9

BSP135H6327XTSA1

Mfr. #:
Buy BSP135H6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 600V 120mA SOT-223-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet