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MBRB3045CTTRL

P1-P3P4-P5
New Product
MBR(F,B)3035CT & MBR(F,B)3045CT
Vishay General Semiconductor
Document Number: 88677
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
15 A x 2
V
RRM
35 V, 45 V
I
FSM
200 A
V
F
0.60 V
T
J
max. 150 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR3035CT
MBR3045CT
ITO-220AB
MBRF3035CT
MBRF3045CT
MBRB3035CT
MBRB3045CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR3035CT MBR3045CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 V
Working peak reverse voltage V
RWM
35 45 V
Maximum DC blocking voltage V
DC
35 45 V
Maximum average forward rectified current
total device
per diode
I
F(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
200 A
Peak repetitive reverse current per diode at t
p
= 2 µs, 1 kHz I
RRM
2.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/µs
Operating junction temperature range T
J
- 65 to + 150 °C
Storage temperature range T
STG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
New Product
MBR(F,B)3035CT & MBR(F,B)3045CT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88677
Revision: 08-Nov-07
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage per diode
(1)
I
F
= 20 A
I
F
= 30 A
I
F
= 30 A
T
C
= 125°C
T
C
= 25 °C
T
C
= 125 °C
V
F
0.60
0.76
0.72
V
Maximum instantaneous reverse current per diode at
rated DC blocking voltage
(1)
T
J
= 25 °C
T
J
= 125 °C
I
R
1.0
60
mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance per diode R
θJC
1.5 4.5 1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR3045CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF3045CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB3045CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB3045CT-E3/81 1.35 81 800/reel Tape reel
TO-220AB MBR3045CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB MBRF3045CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB MBRB3045CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB MBRB3045CTHE3/81
(1)
1.35 81 800/reel Tape reel
Figure 1. Forward Current Derating Curve
0
6
12
24
30
0
50
100
150
18
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
150
100
250
200
300
1
100
10
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
New Product
MBR(F,B)3035CT & MBR(F,B)3045CT
Vishay General Semiconductor
Document Number: 88677
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1.0
0.1
0.01
T
J
= 25 °C
T
J
= 150 °C
0 0.20.1 0.5 1.00.40.3 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
1.0
10
100
0.01
0.001
0.1
200 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Figure 5. Typical Transient Thermal Impedance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
101
100
1000
10 000
100
0.1
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01
101
100
10
100
0.1
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBRB3045CTTRL

Mfr. #:
Buy MBRB3045CTTRL
Manufacturer:
Vishay
Description:
DIODE ARRAY SCHOTTKY 45V D2PAK
Lifecycle:
New from this manufacturer.
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