2SC5103
Transistors
High speed switching transistor (60V, 5A)
2SC5103
!
!!
!Features
1) Low V
CE(sat)
(Typ. 0.15V at I
C
/ I
B
= 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1 µs at I
C
= 3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
!
!!
!
Absolute maximum ratings
(Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
60
5
5
1
150
−55~+150
Unit
V
V
V
A(DC)
10
∗
A(Pulse)
W
10 W(Tc=25°C)
°C
°C
Single pulse Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
∗
!
!!
!
Packaging specifications and h
FE
Type 2SC5103
CPT3
PQ
TL
2500
Package
h
FE
Code
Basic ordering unit (pieces)
!
!!
!External dimensions (Units : mm)
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.5
0.65
0.9
(
1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
5.1
!
!!
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max. Unit
Conditions
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
100
5
−
−
−
82
−
−
−
−
−
−
0.15
−
120
80
−
−
10
10
0.3
270
−
−
V
V
µA
µA
V
−
MHz
pF
I
C
=
50µA
BV
CEO
60
−−
V
I
C
=
1mA
I
E
=
50µA
V
CB
=
100V
V
EB
=
5V
I
C
/I
B
=
3A/0.15A
V
BE(sat)
−−
1.2 V
I
C
/I
B
=
3A/0.15A
−−
0.5 V
I
C
/I
B
=
4A/0.2A
−−
1.5 V
∗
∗
∗
∗
∗
I
C
/I
B
=
4A/0.2A
V
CE
/I
C
=
2V/1A
V
CB
=
10V , I
E
=
0.5A , f
=
30MHz
V
CE
=
10V , I
E
=
0A , f
=
1MHz
t
on
−
−
0.3
µs
I
C
=
3A , R
L
=
10Ω
t
stg
−
−
1.5
µs
I
B1
=
−I
B2
=
0.15A
t
f
−
0.1 0.3
µs
V
CC
30V
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Base-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-base breakdown voltage
Measured using pulse current.
∗
