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DSS4240V-7

P1-P3P4-P5
DSS4240V
Document number: DS31672 Rev. 2 - 2
1 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS4240V
NEW PRODUCT
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DSS5240V)
• Low Collector-Emitter Saturation Voltage, V
CE(SAT)
• Surface Mount Package Suited for Automated Assembly
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.003 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current - Continuous
I
C
2 A
Peak Pulse Collector Current
I
CM
3 A
Base Current (DC)
I
B
300 mA
Peak Base Current
I
BM
1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
600 mW
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
R
θ
JA
208
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
Top View
Bottom View Device Schematic Pin Out Configuration
123
654
1, 2, 5, 6
3
4
Please click here to visit our online spice models database.
DSS4240V
Document number: DS31672 Rev. 2 - 2
2 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS4240V
NEW PRODUCT
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
40
⎯ ⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5)
V
(
BR
)
CEO
40
⎯ ⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
5
⎯ ⎯
V
I
E
= 100μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯ ⎯
100
50
nA
μA
V
CB
= 40V, I
E
= 0
V
CB
= 40V, I
E
= 0, T
A
= 150°C
Collector Cutoff Current
I
CES
⎯ ⎯
100 nA
V
CE
= 40V, V
EB
= 0
Emitter Cutoff Current
I
EBO
⎯ ⎯
100 nA
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
300
300
200
75
⎯
⎯
⎯
⎯
⎯
900
⎯
⎯
⎯
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 2A
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
75
100
190
400
mV
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 2A, I
B
= 200mA
Collector-Emitter Saturation Resistance
R
CE
(
SAT
)
⎯ ⎯
190 mΩ
I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage
V
BE
(
SAT
)
⎯ ⎯
1.2 V
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn On Voltage
V
BE
(
ON
)
⎯ ⎯
1.1 V
V
CE
= 5V, I
C
= 1A
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ ⎯
10 pF
V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
150
⎯ ⎯
MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
t
on
⎯
70
⎯
ns
V
CC
= 10V, I
C
= 1A,
I
B1
= I
B2
= 50mA
Delay Time
t
d
⎯
20
⎯
ns
Rise Time
t
r
⎯
50
⎯
ns
Turn-Off Time
t
off
⎯
310
⎯
ns
Storage Time
t
s
⎯
270
⎯
ns
Fall Time
t
f
⎯
40
⎯
ns
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
200
400
25 50
75 100 125
150
,
WE
DISSI
A
I
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
A
600
0
R = 208°C/W
θ
JA
300
500
100
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
0.001
0.1
1
10
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
0.01
Pw = 100ms
Pw = 10ms
Pw = 1ms
DC
DSS4240V
Document number: DS31672 Rev. 2 - 2
3 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS4240V
NEW PRODUCT
1 10 100 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
1,000
0
200
400
600
800
1,200
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
1,000
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 5V
CE
1 10 100 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.1 1,000
0.001
0.01
0.1
1
V,
LLE
-EMI
E
SATURATION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
0.1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1
0
0.2
0.4
0.6
0.8
1.0
1.
2
V , BASE-EMI
E
N-
N V
L
A
E (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 5V
CE
0.1 10 100 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
11,000
0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
0
30
60
90
120
150
180
A
A
I
AN
E (p
)
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
C
ibo
C
obo
f = 1MHz
P1-P3P4-P5

DSS4240V-7

Mfr. #:
Buy DSS4240V-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
Lifecycle:
New from this manufacturer.
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