IXYS reserves the right to change limits, test conditions, and dimensions.
FMP76-01T
ISOPLUS i4-Pak
TM
Outline
Ref: IXYS CO 0077 R0
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions
2
Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= - 250 μA - 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= - 250μA - 2.0 - 4.0 V
I
GSS
V
GS
= ±20 V, V
DS
= 0V ± 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V -15 μA
T
J
= 125°C - 750 μA
R
DS(on)
V
GS
= -10V, I
D
= - 38A, Note 1 24 mΩ
g
fs
V
DS
= -10V, I
D
= - 38A, Note 1 35 58 S
C
iss
13.7 nF
C
oss
V
GS
= 0V, V
DS
= - 25V, f = 1MHz 890 pF
C
rss
275 pF
t
d(on)
Resistive Switching Times 25 ns
t
r
V
GS
= -10V, V
DS
= 0.5 z V
DSS
, I
D
= - 38A 40 ns
t
d(off)
R
G
= 1Ω (External) 52 ns
t
f
20 ns
Q
g(on)
197 nC
Q
gs
V
GS
= -10V, V
DS
= 0.5 z V
DSS
, I
D
= - 38A 65 nC
Q
gd
65 nC
R
thJC
0.95 °C/W
R
thCS
0.15 °C/W
Drain-Source Diode Characteristic Values
(T
J
= 25°C unless otherwise specified)
Symbol Test Conditions
2
Min. Typ. Max.
I
S
V
GS
= 0V - 54 A
I
SM
Repetitive, pulse width limited by T
JM
- 304 A
V
SD
I
F
= - 38A, V
GS
= 0V, Note 1 - 1.3 V
t
rr
I
F
= - 38A, di/dt = 100A/μs 70 ns
Q
RM
V
R
= - 50V, V
GS
= 0V 215 nC
I
RM
- 6 A