Characteristics ACST1635-8FP
4/13 DocID023630 Rev 2
Figure 6. On-state characteristics
(maximum values)
Figure 7. Surge peak on-state current versus
number of cycles
1
10
100
1000
012345
I (A)
TM
V (V)
TM
T max:
V = 0.9 V
R = 30 m
j
to
d
Ω
T = 150 °C
j
T = 25 °C
j
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
1 10 100 1000
Non repetitive
T initial = 25 °C
j
Repetitive
T = 84 °C
c
Number of cycles
One cycle
t = 20 ms
I (A)
TSM
Figure 8. Non repetitive surge peak on-state
current for a sinusoidal
Figure 9. Relative variation of gate trigger
current and gate trigger voltage versus junction
temperature
10
100
1000
10000
0.01 0.10 1.00 10.00
I A ), I²t (A²s)
TSM(
t (ms )
p
dl /dt limitation: 100 A / µs
pulse with width t <10 ms, and
corresponding v alue of I²t
p
T initial = 25 °C
j
I²t
I
TS M
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -30 -10 10 30 50 70 90 110 130 150
I
GT
Q1-Q2
V
GT
Q1-Q2-Q3
I
GT
Q3
I ,V [T ]/I ,V [T = 25 °C]
GT GT j GT GT j
typical values
T (°C)
j
Figure 10. Relative variation of holding current
and latching current versus junction
temperature
Figure 11. Relative variation of critical rate of
decrease of main current (dI/dt)c versus
reapplied (dV/dt)c
0.0
0.5
1.0
1.5
2.0
-50 -30 -10 10 30 50 70 90 110 130 150
I
H
I
L
typical values
I , [T ] / I , I [T = 25 °C]
HjHLj
I
L
T (°C)
j
(dI/dt)c[(dV/dt) ]/Specified(dI/dt)
cc
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.1 1.0 10.0 100.0
T
j
=125 °C and 150 °C
typical values
(dV/dt) (V/µs)
c
