0 25 50 75 100 125 1500 100 200 300
0
100
200
300
400
0 25 50 75 100 125 150
1 10
10
5
0,001 0,01 0,1 1
0
2000
4000
6000
8000
0 200 400 600
0
400
800
1200
1600
I
2
t
[A
2
s]
I
FAVM
[A] T
A
[°C]
s
t [s]
I
FSM
[A]
P
tot
W]
0,5 1,50,0 1,0 2,0
0
100
200
300
400
500
V
R
= 0 V
T
VJ
= 45°C
I
F
A]
V
F
[V]
t [ms]
T
VJ
= 125°C
1.2
2.0
0.2
0.3
0.5
0.8
R
thKA
K/W
0.1
P
tot
[W]
I
dAVM
[A] T
A
[°C]
Circuit
B6
0.10
0.04
0.02
R
thKA
K/W
0.30
0.07
0.15
0.20
T
VJ
= 125°C
T
VJ
= 25°C
180° sin
120°
60°
30°
DC
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
50 Hz
T
C
[°C]
0 25 50 75 100 125 150
0
100
200
300
400
I
FAVM
[A]
180 ° sin
120 °
60 °
30 °
DC
I
FRMS
[A]
t [s]
0,001 0,01 0,1 1 10
0
400
800
1200
1600
2000
T
C
= 85°C
T
VJ
= 150°C
Fig. 1 Forward current versus
voltage drop
Fig. 2 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 3 I
2
t versus time (1-10 ms)
Fig.4 Power dissipation versus forward current
and ambient temperature (per diode)
Fig. 5 Maximum forward current
at case temperature
Fig.6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
Fig. 7 Rated RMS current versus
time (360° conduction)
Rectifier
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20160408cData according to IEC 60747and per semiconductor unless otherwise specified
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