IRF7807VTRPBF Datasheet IRF7807VTRPBF, IRF7807VPBF | P1-P3

PD-95210

IRF7807VPbF

11/3/04

DEVICE CHARACTERISTICS

• N Channel Application Specific MOSFET

• Ideal for Mobile DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

 100% R

G

Tested

 Lead-Free

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge. The

reduction of conduction and switching losses makes

it ideal for high efficiency DC-DC Converters that

power the latest generation of mobile microprocessors.

A pair of IRF7807V devices provides the best cost/

performance solution for system voltages, such as

3.3V and 5V.

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

SO-8

IRF7807V

R

DS(on)

17 mΩ

Q

G

9.5 nC

Q

SW

3.4 nC

Q

OSS

12 nC

Absolute Maximum Ratings

Symbol Units

V

DS

V

GS

Continuous Drain or Source

T

A

= 25°C

(V

GS

≥ 4.5V)

T

A

= 70°C

I

DM

T

A

= 25°C

T

A

= 70°C

T

J

, T

STG

°C

I

S

I

SM

Thermal Resistance

Symbol Typ Max Units

R

θ

JA

––– 50

R

θ

JL

––– 20

A

W

A

°C/W

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

Parameter

V

Power Dissipation

Drain-Source Voltage

Gate-Source Voltage

Pulsed Drain Current

P

D

I

D

IRF7807V

8.3

2.5

66

2.5

-55 to 150

1.6

66

30

±20

6.6

HEXFET

®

Power MOSFET

IRF7807VPbF

2 www.irf.com

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Pulse width ≤ 400 µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board

 Typ = measured - Q

oss

 Typical values of R

DS

(on) measured at V

GS

= 4.5V, Q

G

, Q

SW

and Q

OSS

measured at V

GS

= 5.0V, I

F

= 7.0A.

 R

θ

is measured at T

J

approximately 90°C

* Device are 100% tested to these parameters.

Electrical Characteristics

Parameter Symbol Min Typ Max Units

Drain-Source Breakdown Voltage

BV

DSS

30 ––– ––– V

Static Drain-Source On-Resistance

R

DS(on)

––– 17 25

mΩ

Gate Threshold Voltage

V

GS(th)

1.0 ––– 3.0 V

––– ––– 100

––– ––– 20

––– ––– 100

Gate-Source Leakage Current*

I

GSS

––– ––– ±100 nA

Total Gate Charge*

Q

G

––– 9.5 14

Pre-Vth Gate-Source Charge

Q

GS1

––– 2.3 –––

Post-Vth Gate-Source Charge

Q

GS2

––– 1.0 –––

Gate-to-Drain Charge

Q

GD

––– 2.4 –––

Switch Charge (Q

gs2

+ Q

gd

)Q

SW

––– 3.4 5.2

Output Charge*

Q

OSS

––– 12 16.8

V

DS

= 16V, V

GS

= 0

Gate Resistance

R

G

0.9 ––– 2.8

Ω

Turn-On Delay Time

t

d(on)

––– 6.3 –––

Rise Time

t

r

––– 1.2 –––

Turn-Off Delay Time

t

d(off)

––– 11 –––

Fall Time

t

f

––– 2.2 –––

Source-Drain Ratings and Characteristics

Parameter

Symbol

Min Typ Max Units

Diode Forward Voltage*

V

SD

––– ––– 1.2 V

Reverse Recovery Charge

(with Parallel Schottsky)

64–––

I

S

= 7.0A ,V

GS

= 0V

–––

Q

rr

Conditions

V

GS

= 0V, I

D

= 250µA

V

GS

= 4.5V, I

D

= 7.0A

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 30V, V

GS

= 0

V

GS

= ± 20V

I

DSS

Drain-Source Leakage Current

V

DS

= 16V

V

DS

= 24V, V

GS

= 0

V

DS

= 24V, V

GS

= 0, T

J

= 100°C

V

GS

= 5V, I

D

= 7.0A

µA

nC

ns

Conditions

V

GS

= 5V, R

G

= 2Ω

V

DD

= 16V

I

D

= 7A

Resistive Load

–––

nC

Reverse Recovery Charge

di/dt = 700A/µs , (with 10BQ040)

V

DS

= 16V, V

GS

= 0V, I

S

= 7.0A

di/dt = 700A/µs

V

DS

= 16V, V

GS

= 0V, I

S

= 7.0A

Q

rr(s)

––– 41

IRF7807VPbF

www.irf.com 3

Control FET

Special attention has been given to the power losses

in the switching elements of the circuit - Q1 and Q2.

Power losses in the high side switch Q1, also called

the Control FET, are impacted by the R

ds(on)

of the

MOSFET, but these conduction losses are only about

one half of the total losses.

Power losses in the control switch Q1 are given

by;

P

loss

= P

conduction

+ P

switching

+ P

drive

+ P

output

This can be expanded and approximated by;

P

loss

= I

rms

2

× R

ds(on )

()

+ I ×

Q

gd

i

g

× V

in

× f

⎛

⎝

⎜

⎞

⎠

⎟

+ I ×

Q

gs 2

i

g

× V

in

× f

⎛

⎝

⎜

⎞

⎠

⎟

+ Q

g

× V

g

× f

()

+

Q

oss

2

×V

in

× f

⎛

⎝

⎞

⎠

This simplified loss equation includes the terms Q

gs2

and Q

oss

which are new to Power MOSFET data sheets.

Q

gs2

is a sub element of traditional gate-source

charge that is included in all MOSFET data sheets.

The importance of splitting this gate-source charge

into two sub elements, Q

gs1

and Q

gs2

, can be seen from

Fig 1.

Q

gs2

indicates the charge that must be supplied by

the gate driver between the time that the threshold

voltage has been reached (t1) and the time the drain

current rises to I

dmax

(t2) at which time the drain volt-

age begins to change. Minimizing Q

gs2

is a critical fac-

tor in reducing switching losses in Q1.

Q

oss

is the charge that must be supplied to the out-

put capacitance of the MOSFET during every switch-

ing cycle. Figure 2 shows how Q

oss

is formed by the

parallel combination of the voltage dependant (non-

linear) capacitance’s C

ds

and C

dg

when multiplied by

the power supply input buss voltage.

Figure 1: Typical MOSFET switching waveform

Synchronous FET

The power loss equation for Q2 is approximated

by;

P

loss

= P

conduction

+ P

drive

+ P

output

*

P

loss

= I

rms

2

× R

ds(on)()

+ Q

g

× V

g

× f

()

+

Q

oss

2

×V

in

× f

⎛

⎝

⎜

⎞

⎠

+ Q

rr

× V

in

× f

(

)

*dissipated primarily in Q1.

Power MOSFET Selection for DC/DC

Converters

4

1

2

Drain Current

Gate Voltage

Drain Voltage

t3

t2

t1

V

GTH

Q

GS1

Q

GS2

Q

GD

t0

IRF7807VTRPBF

IRF7807VTRPBF

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