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APT150GN120J

P1-P3P4-P6
050-7608 Rev B 11-2005
APT150GN120J
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 800V
R
G
= 1.0Ω
L = 100µH
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 800V
T
J
= 25°C, or 125°C
R
G
= 1.0Ω
L = 100µH
60
50
40
30
20
10
0
400
350
300
250
200
150
100
50
0
120,000
100,000
80,000
60,000
40,000
20,000
0
200,000
160,000
120,000
80,000
40,000
0
1000
800
600
400
200
0
250
200
150
100
50
0
50,000
40,000
30,000
20,000
10,000
0
120,000
100,000
80,000
60,000
40,000
20,000
0
V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
=
25°C, V
GE
= 15V
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0Ω
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350
0 5 10 15 20 0 25 50 75 100 125
R
G
= 1.0Ω, L = 100µH, V
CE
= 800V
R
G
= 1.0Ω, L = 100µH, V
CE
= 800V
T
J
= 25 or 125°C,V
GE
= 15V
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0Ω
T
J
= 125°C
T
J
= 25°C
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0Ω
T
J
= 125°C
T
J
= 25°C
E
on2,
300A
E
off,
300A
E
on2,
150A
E
off,
150A
E
on2,
75A
E
off,
75A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
E
on2,
300A
E
off,
300A
E
on2,
150A
E
off,
150A
E
on2,
75A
E
off,
75A
050-7608 Rev B 11-2005
APT150GN120J
TYPICAL PERFORMANCE CURVES
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
20,000
10,000
500
100
50
10
500
450
400
350
300
250
200
150
100
50
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0
10 20 30 40 50 0 200 400 600 800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20
70 120 170 220 270
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125°C
T
C
= 75°C
D = 50 %
V
CE
= 800V
R
G
= 1.0Ω
30
10
5
1
0.5
0.1
0.05
F
max
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
θJC
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
C
res
C
oes
C
ies
0.0457
0.133
0.0221
0.025
0.569
30.8
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
050-7608 Rev B 11-2005
APT150GN120J
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
T
J
= 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT100DQ120
SOT-227 (ISOTOP
®)
Package Outline
ISOTOP ® is a Registered Trademark of SGS Thomson.
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
P1-P3P4-P6

APT150GN120J

Mfr. #:
Buy APT150GN120J
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules FG, IGBT, 1200V, 150A, SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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