P0102BL 5AA4 Datasheet P0102MN 5AA4, P0102BL 5AA4, P0102DA 5AL3 | P1-P3

This is information on a product in full production.

April 2014 DocID15197 Rev 2 1/12

P010XX

Sensitive standard SCRs up to 0.8 A

Datasheet − production data

Features

• On-state rms current, 0.8 A

• Repetitive peak off-state voltage up to 600 V

• Triggering gate current from 5 to 200 µA

• ECOPACK

®

2 compliant component

Description

Thanks to highly sensitive triggering levels, the

P010XX SCR series is suitable for all applications

where available gate current is limited, such as

ground fault circuit interrupters, pilot circuits in

solid state relays, stand-by mode power supplies,

smoke and alarm detectors.

Available in through-hole or surface mount

packages, the voltage capability of this series has

been upgraded since its introduction and is now

available up to 600 V.

A

K

G

TO-92

(P010xxA)

SOT-223

(P0102xN)

A

K

G

A

K

G

A

K

G

SOT23-3L

(P010xxL)

Table 1. Device summary

Symbol Value Unit

I

T(RMS)

up to 0.8 A

V

DRM

/V

RRM

up to 600 V

I

GT

From 5 to 200 µA

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Characteristics P010xx

2/12 DocID15197 Rev 2

1 Characteristics

Table 2. Absolute ratings (limiting values) P010xxA and P010xxN

Symbol Parameter Value Unit

I

T(RMS)

On-state rms current (180° conduction angle)

TO-92 T

l

= 55 °C

0.8 A

SOT-223 T

amb

= 70 °C

IT

(AV)

Average on-state current (180° conduction angle)

TO-92 T

l

= 55 °C

0.5 A

SOT-223 T

amb

= 70 °C

I

TSM

Non repetitive surge peak on-state current

t

p

= 8.3 ms

T

j

= 25 °C

8

A

t

p

= 10 ms 7

I

²

tI

²

t value for fusing t

p

= 10 ms T

j

= 25 °C 0.24 A

2

S

dI/dt

Critical rate of rise of on-state current

I

G

= 2 x I

GT

, t

r

≤ 100 ns

F = 60 Hz T

j

= 125 °C 50 A/µs

I

GM

Peak gate current t

p

= 20 µs T

j

= 125 °C 1 A

P

G(AV)

Average gate power dissipation T

j

= 125 °C 0.1 W

T

stg

T

j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 3. Absolute ratings (limiting values) P010xxL

Symbol Parameter Value Unit

I

T(RMS)

On-state rms current (180° conduction angle) T

amb

= 36 °C 0.25 A

IT

(AV)

Average on-state current (180° conduction angle) T

amb

= 36 °C 0.16 A

I

TSM

Non repetitive surge peak on-state current

t

p

= 8.3 ms

T

j

= 25 °C

7

A

t

p

= 10 ms 6

I

²

tI

²

t value for fusing t

p

= 10 ms T

j

= 25 °C 0.18 A

2

S

dI/dt

Critical rate of rise of on-state current

I

G

= 2 x I

GT

, t

r

≤ 100 ns

F = 60 Hz T

j

= 125 °C 50 A/µs

I

GM

Peak gate current t

p

= 20 µs T

j

= 125 °C 0.5 A

P

G(AV)

Average gate power dissipation T

j

= 125 °C 0.02 W

T

stg

T

j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

DocID15197 Rev 2 3/12

P010xx Characteristics

12

Table 4. Electrical characteristics

(1)

P010xxA and P010xxN

Symbol Test conditions Value Unit

I

GT

V

D

= 12 V, R

L

= 140 Ω

Max. 200 µA

V

GT

Max. 0.8 V

V

GD

V

D

= V

DRM

, R

L

= 3.3 kΩ, R

GK

= 1 kΩ T

j

= 125 °C Min. 0.1 V

V

RG

I

RG

= 10 µA Min. 8 V

I

H

I

T

= 50 mA, R

GK

= 1 kΩ Max. 5 mA

I

L

I

G

= 1 mA, R

GK

= 1 kΩ Max. 6 mA

dV/dt V

D

= 67% V

DRM,

R

GK

= 1 kΩ T

j

= 125 °C Min. 75 V/µs

V

TM

I

TM

= 1.6 A, tp = 380 µs T

j

= 25 °C Max. 1.95 V

V

t0

Threshold voltage T

j

= 125 °C Max. 0.95 V

R

d

Dynamic resistance T

j

= 125 °C Max. 600 mΩ

I

DRM

I

RRM

V

DRM

= V

RRM

= 400 V R

GK

= 1 kΩ

T

j

= 25 °C

Max.

1

µAV

DRM

= V

RRM

= 600 V R

GK

= 1 kΩ 10

V

DRM

= V

RRM

R

GK

= 1 kΩ T

j

= 125 °C 100

1. T

j

= 25 °C, unless otherwise specified

Table 5. Electrical characteristics

(1)

P010xxL

Symbol Test conditions P0102xL P0109AL Unit

I

GT

V

D

= 12 V, R

L

= 140 Ω

Max. 200 1 µA

V

GT

Max. 0.8 V

V

GD

V

D

= V

DRM

, R

L

= 3.3 kΩ, R

GK

= 1 kΩ T

j

= 125 °C Min. 0.1 V

V

RG

I

RG

= 10 µA Min. 8 V

I

H

I

T

= 50 mA, R

GK

= 1 kΩ Max. 6 mA

I

L

I

G

= 1 mA, R

GK

= 1 kΩ Max. 7 mA

dV/dt V

D

= 67% V

DRM

, R

GK

= 1 kΩ T

j

= 125 °C Min. 200 100 V/µs

V

TM

I

TM

= 0.4 A, tp = 380 µs T

j

= 25 °C Max. 1.7 V

V

t0

Threshold voltage T

j

= 125 °C Max. 1.0 V

R

d

Dynamic resistance T

j

= 125 °C Max. 1000 mΩ

I

DRM

I

RRM

V

DRM

= V

RRM

T

j

= 25 °C

Max.

1

µA

T

j

= 125 °C 100

1. T

j

= 25 °C, unless otherwise specified

P0102BL 5AA4

P0102BL 5AA4

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