FS10R12VT3BOMA1 Datasheet FS10R12VT3BOMA1 | P1-P3

1

TechnischeInformation/TechnicalInformation

FS10R12VT3

IGBT-Module

IGBT-modules

preparedby:MB

approvedby:IG

dateofpublication:2013-10-03

revision:2.0

VorläufigeDaten

PreliminaryDataIGBT,Wechselrichter/IGBT,Inverter

HöchstzulässigeWerte/MaximumRatedValues

Kollektor-Emitter-Sperrspannung

Collector-emittervoltage

T

vj

= 25°C V

CES

 1200  V

Kollektor-Dauergleichstrom

ContinuousDCcollectorcurrent

T

C

= 80°C, T

vj max

= 150°C

T

C

= 25°C, T

vj max

= 150°C

I

C nom

I

C



10

16



A

PeriodischerKollektor-Spitzenstrom

Repetitivepeakcollectorcurrent

t

P

= 1 ms I

CRM

 20  A

Gesamt-Verlustleistung

Totalpowerdissipation

T

C

= 25°C, T

vj max

= 150 P

tot

 64,0  W

Gate-Emitter-Spitzenspannung

Gate-emitterpeakvoltage

 V

GES

 +/-20  V

CharakteristischeWerte/CharacteristicValues

min. typ. max.

Kollektor-Emitter-Sättigungsspannung

Collector-emittersaturationvoltage

I

C

= 10 A, V

GE

= 15 V

I

C

= 10 A, V

GE

= 15 V

V

CE sat

1,90

2,15

2,45

V

T

vj

= 25°C

T

vj

= 125°C

Gate-Schwellenspannung

Gatethresholdvoltage

I

C

= 0,30 mA, V

CE

= V

GE

, T

vj

= 25°C V

GEth

5,0 5,8 6,5 V

Gateladung

Gatecharge

V

GE

= -15 V ... +15 V Q

G

 0,10  µC

InternerGatewiderstand

Internalgateresistor

T

vj

= 25°C R

Gint

 0,0  Ω

Eingangskapazität

Inputcapacitance

f = 1 MHz, T

vj

= 25°C, V

CE

= 25 V, V

GE

= 0 V C

ies

 0,70  nF

Rückwirkungskapazität

Reversetransfercapacitance

f = 1 MHz, T

vj

= 25°C, V

CE

= 25 V, V

GE

= 0 V C

res

 0,026  nF

Kollektor-Emitter-Reststrom

Collector-emittercut-offcurrent

V

CE

= 1200 V, V

GE

= 0 V, T

vj

= 25°C I

CES

  1,0 mA

Gate-Emitter-Reststrom

Gate-emitterleakagecurrent

V

CE

= 0 V, V

GE

= 20 V, T

vj

= 25°C I

GES

  100 nA

Einschaltverzögerungszeit,induktiveLast

Turn-ondelaytime,inductiveload

I

C

= 10 A, V

CE

= 600 V

V

GE

= ±15 V

R

Gon

= 82 Ω

t

d on



0,037



µs

T

vj

= 25°C

T

vj

= 125°C

Anstiegszeit,induktiveLast

Risetime,inductiveload

I

C

= 10 A, V

CE

= 600 V

V

GE

= ±15 V

R

Gon

= 82 Ω

t

r



0,02

0,025



µs

T

vj

= 25°C

T

vj

= 125°C

Abschaltverzögerungszeit,induktiveLast

Turn-offdelaytime,inductiveload

I

C

= 10 A, V

CE

= 600 V

V

GE

= ±15 V

R

Goff

= 82 Ω

t

d off



0,29

0,39



µs

T

vj

= 25°C

T

vj

= 125°C

Fallzeit,induktiveLast

Falltime,inductiveload

I

C

= 10 A, V

CE

= 600 V

V

GE

= ±15 V

R

Goff

= 82 Ω

t

f



0,09

0,15



µs

T

vj

= 25°C

T

vj

= 125°C

EinschaltverlustenergieproPuls

Turn-onenergylossperpulse

I

C

= 10 A, V

CE

= 600 V, L

S

= 60 nH

V

GE

= ±15 V

R

Gon

= 82 Ω

E

on



0,95

1,25



mJ

T

vj

= 25°C

T

vj

= 125°C

AbschaltverlustenergieproPuls

Turn-offenergylossperpulse

I

C

= 10 A, V

CE

= 600 V, L

S

= 60 nH

V

GE

= ±15 V

R

Goff

= 82 Ω

E

off



0,70

1,10



mJ

T

vj

= 25°C

T

vj

= 125°C

Kurzschlußverhalten

SCdata

V

GE

≤ 15 V, V

CC

= 900 V

V

CEmax

= V

CES

-L

sCE

·di/dt

I

SC



35



A

T

vj

= 125°C

t

P

≤ 10 µs,

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

proIGBT/perIGBT R

thJC

 1,75 1,95 K/W

Wärmewiderstand,GehäusebisKühlkörper

Thermalresistance,casetoheatsink

proIGBT/perIGBT

λ

Paste

=1W/(m·K)/λ

grease

=1W/(m·K)

R

thCH

 0,65 K/W

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

 T

vj op

-40  125 °C

2

TechnischeInformation/TechnicalInformation

FS10R12VT3

IGBT-Module

IGBT-modules

preparedby:MB

approvedby:IG

dateofpublication:2013-10-03

revision:2.0

VorläufigeDaten

PreliminaryData

Diode,Wechselrichter/Diode,Inverter

HöchstzulässigeWerte/MaximumRatedValues

PeriodischeSpitzensperrspannung

Repetitivepeakreversevoltage

T

vj

= 25°C V

RRM

 1200  V

Dauergleichstrom

ContinuousDCforwardcurrent

 I

F

 10  A

PeriodischerSpitzenstrom

Repetitivepeakforwardcurrent

t

P

= 1 ms I

FRM

 20  A

Grenzlastintegral

I²t-value

V

R

= 0 V, t

P

= 10 ms, T

vj

= 125°C I²t  33,0  A²s

CharakteristischeWerte/CharacteristicValues

min. typ. max.

Durchlassspannung

Forwardvoltage

I

F

= 10 A, V

GE

= 0 V

I

F

= 10 A, V

GE

= 0 V

V

F

1,65

2,10

V

T

vj

= 25°C

T

vj

= 125°C

Rückstromspitze

Peakreverserecoverycurrent

I

F

= 10 A, - di

F

/dt = 650 A/µs (T

vj

=125°C)

V

R

= 600 V

V

GE

= -15 V

I

RM



16,0

16,5 

A

T

vj

= 25°C

T

vj

= 125°C

Sperrverzögerungsladung

Recoveredcharge

I

F

= 10 A, - di

F

/dt = 650 A/µs (T

vj

=125°C)

V

R

= 600 V

V

GE

= -15 V

Q

r



1,20

2,00



µC

T

vj

= 25°C

T

vj

= 125°C

AbschaltenergieproPuls

Reverserecoveryenergy

I

F

= 10 A, - di

F

/dt = 650 A/µs (T

vj

=125°C)

V

R

= 600 V

V

GE

= -15 V

E

rec



0,38

0,68



mJ

T

vj

= 25°C

T

vj

= 125°C

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

proDiode/perdiode R

thJC

 2,25 2,50 K/W

Wärmewiderstand,GehäusebisKühlkörper

Thermalresistance,casetoheatsink

proDiode/perdiode

λ

Paste

=1W/(m·K)/λ

grease

=1W/(m·K)

R

thCH

 0,70 K/W

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

 T

vj op

-40  125 °C

Modul/Module

Isolations-Prüfspannung

Isolationtestvoltage

RMS, f = 50 Hz, t = 1 min V

ISOL

 2,5  kV

InnereIsolation

Internalisolation

Basisisolierung(Schutzklasse1,EN61140)

basicinsulation(class1,IEC61140)

  Al

2

O

3

 

Kriechstrecke

Creepagedistance

Kontakt-Kühlkörper/terminaltoheatsink

Kontakt-Kontakt/terminaltoterminal

 

5,0

10,0

 mm

Luftstrecke

Clearance

Kontakt-Kühlkörper/terminaltoheatsink

Kontakt-Kontakt/terminaltoterminal

 

3,2

7,0

 mm

VergleichszahlderKriechwegbildung

Comperativetrackingindex

 CTI  > 225  

min. typ. max.

Modulstreuinduktivität

Strayinductancemodule

 L

sCE

 20  nH

Modulleitungswiderstand,Anschlüsse-

Chip

Moduleleadresistance,terminals-chip

T

C

=25°C,proSchalter/perswitch

R

CC'+EE'

R

AA'+CC'



9,00

 mΩ

Lagertemperatur

Storagetemperature

 T

stg

-40  125 °C

Anpresskraft für mech. Bef. pro Feder

mountig force per clamp

 F 30 - 50 N

Gewicht

Weight

 G  10  g

With additional insulation of the mounting clamp higher values of creepage and clearance distances to

the heatsink can be achieved. For more information call your responsible sales representative.

3

TechnischeInformation/TechnicalInformation

FS10R12VT3

IGBT-Module

IGBT-modules

preparedby:MB

approvedby:IG

dateofpublication:2013-10-03

revision:2.0

VorläufigeDaten

PreliminaryData

AusgangskennlinieIGBT,Wechselrichter(typisch)

outputcharacteristicIGBT,Inverter(typical)

I

C

=f(V

CE

)

V

GE

=15V

V

CE

[V]

I

C

[A]

0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0

0

2

4

6

8

10

12

14

16

18

20

T

vj

= 25°C

T

vj

= 125°C

AusgangskennlinienfeldIGBT,Wechselrichter(typisch)

outputcharacteristicIGBT,Inverter(typical)

I

C

=f(V

CE

)

T

vj

=125°C

V

CE

[V]

I

C

[A]

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

0

2

4

6

8

10

12

14

16

18

20

V

GE

= 19V

V

GE

= 17V

V

GE

= 15V

V

GE

= 13V

V

GE

= 11V

V

GE

= 9V

ÜbertragungscharakteristikIGBT,Wechselrichter(typisch)

transfercharacteristicIGBT,Inverter(typical)

I

C

=f(V

GE

)

V

CE

=20V

V

GE

[V]

I

C

[A]

5 6 7 8 9 10 11 12 13

0

2

4

6

8

10

12

14

16

18

20

T

vj

= 25°C

T

vj

= 125°C

SchaltverlusteIGBT,Wechselrichter(typisch)

switchinglossesIGBT,Inverter(typical)

E

on

=f(I

C

),E

off

=f(I

C

)

V

GE

=±15V,R

Gon

=82Ω,R

Goff

=82Ω,V

CE

=600V

I

C

[A]

E [mJ]

0 2 4 6 8 10 12 14 16 18 20

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

E

on

, T

vj

= 125°C

E

off

, T

vj

= 125°C

FS10R12VT3BOMA1

FS10R12VT3BOMA1

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