I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
738 693 648 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
828 783 738 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
666 576 486 mA
Precharge quiet standby current I
DD2Q
2
720 630 540 mA
Precharge standby current I
DD2N
2
774 684 594 mA
Precharge standby ODT current I
DD2NT
2
513 468 423 mA
Active power-down current I
DD3P
2
900 810 720 mA
Active standby current I
DD3N
2
990 900 820 mA
Burst read operating current I
DD4R
1
1512 1377 1278 mA
Burst write operating current I
DD4W
1
1413 1278 1143 mA
Refresh current I
DD5B
1
1863 1818 1773 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 216 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
243 243 243 mA
All banks interleaved read current I
DD7
1
2268 2133 1998 mA
Reset current I
DD8
2
234 234 234 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 VLP UDIMM
I
DD
Specifications
PDF: 09005aef84a97472
jdf18c512_1gx72az.pdf - Rev. C 04/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revisions E and J)
Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
657 585 558 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
756 720 693 mA
Precharge power-down current: Slow exit I
DD2P0
2
324 324 324 mA
Precharge power-down current: Fast exit I
DD2P1
2
576 504 468 mA
Precharge quiet standby current I
DD2Q
2
576 504 486 mA
Precharge standby current I
DD2N
2
576 522 504 mA
Precharge standby ODT current I
DD2NT
2
513 477 450 mA
Active power-down current I
DD3P
2
684 630 576 mA
Active standby current I
DD3N
2
684 630 576 mA
Burst read operating current I
DD4R
1
1575 1422 1269 mA
Burst write operating current I
DD4W
1
1287 1152 1017 mA
Refresh current I
DD5B
1
2277 2214 2178 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
360 360 360 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
450 450 450 mA
All banks interleaved read current I
DD7
1
2142 1872 1602 mA
Reset current I
DD8
2
360 360 360 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 VLP UDIMM
I
DD
Specifications
PDF: 09005aef84a97472
jdf18c512_1gx72az.pdf - Rev. C 04/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Temperature Sensor with Serial Presence-Detect EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the SPD EEPROM. Refer to JEDEC
standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with
Temperature Sensor."
Serial Presence-Detect
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 13: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Supply current: V
DD
= 3.3V I
DD
2.0 mA
Input high voltage: Logic 1; SCL, SDA V
IH
V
DDSPD
x 0.7 V
DDSPD
+ 1 V
Input low voltage: Logic 0; SCL, SDA V
IL
–0.5 V
DDSPD
x 0.3 V
Output low voltage: I
OUT
= 2.1mA V
OL
0.4 V
Input current I
IN
–5.0 5.0 µA
Temperature sensing range –40 125 °C
Temperature sensor accuracy (class B) –1.0 1.0 °C
Table 14: Temperature Sensor and SPD EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Time bus must be free before a new transition can
start
t
BUF 4.7 µs
SDA fall time
t
F 20 300 ns
SDA rise time
t
R 1000 ns
Data hold time
t
HD:DAT 200 900 ns
Start condition hold time
t
H:STA 4.0 µs
Clock HIGH period
t
HIGH 4.0 50 µs
Clock LOW period
t
LOW 4.7 µs
SCL clock frequency
t
SCL 10 100 kHz
Data setup time
t
SU:DAT 250 ns
Start condition setup time
t
SU:STA 4.7 µs
Stop condition setup time
t
SU:STO 4.0 µs
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 VLP UDIMM
Temperature Sensor with Serial Presence-Detect EEPROM
PDF: 09005aef84a97472
jdf18c512_1gx72az.pdf - Rev. C 04/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

MT18JDF51272AZ-1G6M1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet