AD8541/AD8542/AD8544
Rev. G | Page 4 of 20
V
S
= 3.0 V, V
CM
= 1.5 V, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
1 6 mV
−40°C T
A
≤ +125°C 7 mV
Input Bias Current I
B
4 60 pA
−40°C T
A
≤ +85°C 100 pA
−40°C T
A
≤ +125°C 1000 pA
Input Offset Current I
OS
0.1 30 pA
−40°C T
A
≤ +85°C 50 pA
−40°C T
A
≤ +125°C 500 pA
Input Voltage Range 0 3 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 3 V 40 45 dB
−40°C T
A
≤ +125°C 38 dB
Large Signal Voltage Gain A
VO
R
L
= 100 kΩ, V
O
= 0.5 V to 2.2 V 100 500 V/mV
−40°C T
A
≤ +85°C 50 V/mV
−40°C T
A
≤ +125°C 2 V/mV
Offset Voltage Drift ∆V
OS
/∆T −40°C ≤ T
A
≤ +125°C 4 V/°C
Bias Current Drift ∆I
B
/∆T −40°C ≤ T
A
≤ +85°C 100 fA/°C
−40°C T
A
≤ +125°C 2000 fA/°C
Offset Current Drift ∆I
OS
/∆T −40°C ≤ T
A
≤ +125°C 25 fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
I
L
= 1 mA 2.875 2.955 V
−40°C T
A
≤ +125°C 2.850 V
Output Voltage Low V
OL
I
L
= 1 mA 32 100 mV
−40°C T
A
≤ +125°C 125 mV
Output Current I
OUT
V
OUT
= V
S
− 1 V 18 mA
I
SC
±25 mA
Closed-Loop Output Impedance Z
OUT
f = 200 kHz, A
V
= 1 50
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 2.5 V to 6 V 65 76 dB
−40°C T
A
≤ +125°C 60 dB
Supply Current/Amplifier I
SY
V
O
= 0 V 40 60 µA
−40°C T
A
≤ +125°C 75 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 100 kΩ 0.4 0.8 V/µs
Settling Time t
S
To 0.01% (1 V step) 5 µs
Gain Bandwidth Product GBP 980 kHz
Phase Margin Φ
M
64 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 1 kHz 42 nV/√Hz
e
n
f = 10 kHz 38 nV/√Hz
Current Noise Density i
n
<0.1 pA/√Hz
AD8541/AD8542/AD8544
Rev. G | Page 5 of 20
V
S
= 5.0 V, V
CM
= 2.5 V, T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
1 6 mV
−40°C T
A
≤ +125°C 7 mV
Input Bias Current I
B
4 60 pA
−40°C T
A
≤ +85°C 100 pA
−40°C T
A
≤ +125°C 1000 pA
Input Offset Current I
OS
0.1 30 pA
−40°C T
A
≤ +85°C 50 pA
−40°C T
A
≤ +125°C 500 pA
Input Voltage Range 0 5 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 5 V 40 48 dB
−40°C T
A
≤ +125°C 38 dB
Large Signal Voltage Gain A
VO
R
L
= 100 kΩ, V
O
= 0.5 V to 2.2 V 20 40 V/mV
−40°C T
A
≤ +85°C 10 V/mV
−40°C T
A
≤ +125°C 2 V/mV
Offset Voltage Drift ∆V
OS
/∆T −40°C ≤ T
A
≤ +125°C 4 V/°C
Bias Current Drift ∆I
B
/∆T −40°C ≤ T
A
≤ +85°C 100 fA/°C
−40°C T
A
≤ +125°C 2000 fA/°C
Offset Current Drift ∆I
OS
/∆T −40°C ≤ T
A
≤ +125°C 25 fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
I
L
= 1 mA 4.9 4.965 V
−40°C T
A
≤ +125°C 4.875 V
Output Voltage Low V
OL
I
L
= 1 mA 25 100 mV
−40°C T
A
≤ +125°C 125 mV
Output Current I
OUT
V
OUT
= V
S
− 1 V 30 mA
I
SC
±60 mA
Closed-Loop Output Impedance Z
OUT
f = 200 kHz, A
V
= 1 45
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 2.5 V to 6 V 65 76 dB
−40°C T
A
≤ +125°C 60 dB
Supply Current/Amplifier I
SY
V
O
= 0 V 45 65 µA
−40°C T
A
≤ +125°C 85 µA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 100 kΩ, C
L
= 200 pF 0.45 0.92 V/µs
Full Power Bandwidth BW
P
1% distortion 70 kHz
Settling Time t
S
To 0.1% (1 V step) 6 µs
Gain Bandwidth Product GBP 1000 kHz
Phase Margin Φ
M
67 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 1 kHz 42 nV/√Hz
e
n
f = 10 kHz 38 nV/√Hz
Current Noise Density i
n
<0.1 pA/√Hz
AD8541/AD8542/AD8544
Rev. G | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 4.
Parameter Rating
Supply Voltage (V
S
) 6 V
Input Voltage GND to V
S
Differential Input Voltage
1
±6 V
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages and
measured using a standard 4-layer board, unless otherwise
specified.
Table 5.
Package Type θ
JA
θ
JC
Unit
5-Lead SC70 (KS) 376 126 °C/W
5-Lead SOT-23 (RJ) 190 92 °C/W
8-Lead SOIC (R) 120 45 °C/W
8-Lead MSOP (RM) 142 45 °C/W
8-Lead TSSOP (RU) 240 43 °C/W
14-Lead SOIC (R) 115 36 °C/W
14-Lead TSSOP (RU) 112 35 °C/W
1
For supplies less than 6 V, the differential input voltage is equal to ±V
S
.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION

AD8542ARUZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Operational Amplifiers - Op Amps Gen-Purp CMOS Dual RR
Lifecycle:
New from this manufacturer.
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