OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PBRP123ET,215

P1-P3P4-P6P7-P9P10-P12P13-P13
PBRP123ET_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 16 January 2008 6 of 12
NXP Semiconductors
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −30 V;
I
E
=0A
--−100 nA
I
CEO
collector-emitter cut-off
current
V
CE
= −30 V;
I
B
=0A
--−0.5 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5V;
I
C
=0A
--−2mA
h
FE
DC current gain V
CE
= −5V;
I
C
= −50 mA
70 120 -
V
CE
= −5V;
I
C
= −300 mA
[1]
180 250 -
V
CE
= −5V;
I
C
= −600 mA
[1]
170 240 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −50 mA;
I
B
= −2.5 mA
- −35 −45 mV
I
C
= −200 mA;
I
B
= −10 mA
- −70 −100 mV
I
C
= −500 mA;
I
B
= −10 mA
[1]
- −200 −300 mV
I
C
= −600 mA;
I
B
= −6mA
[1]
- −450 −750 mV
V
I(off)
off-state input voltage V
CE
= −5V;
I
C
= −100 µA
−0.6 −1 −1.8 V
V
I(on)
on-state input voltage V
CE
= −0.3 V;
I
C
= −20 mA
−1 −1.3 −2V
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.9 1 1.1
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A;
f=1MHz
-11-pF
PBRP123ET_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 16 January 2008 7 of 12
NXP Semiconductors
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
V
CE
= −5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=50
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
= 100
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab085
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
1
10
10
2
10
3
h
FE
10
−1
(1)
(2)
(3)
006aab086
I
C
(mA)
−1 −10
3
−10
2
−10
−10
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
I
C
(mA)
−10 −10
3
−10
2
006aab087
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
I
C
(mA)
−10 −10
3
−10
2
006aab088
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
PBRP123ET_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 16 January 2008 8 of 12
NXP Semiconductors
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
8. Package outline
V
CE
= −0.3 V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
V
CE
= −5V
(1) T
amb
= −40 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 9. On-state input voltage as a function of collector
current; typical values
Fig 10. Off-state input voltage as a function of collector
current; typical values
006aab089
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
−1
−10
V
I(on)
(V)
−10
−1
(1)
(2)
(3)
006aab090
I
C
(mA)
−10
−1
−10
2
−10−1
−1
−10
V
I(off)
(V)
−10
−1
(1)
(2)
(3)
Fig 11. Package outline SOT23 (TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
P1-P3P4-P6P7-P9P10-P12P13-P13

PBRP123ET,215

Mfr. #:
Buy PBRP123ET,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased BISS RET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet