Document #: 001-07704 Rev. *B Page 7 of 10
Absolute Maximum Conditions
Parameter Description Min Max Unit
V
DD
Supply Voltage –0.5 4.6 V
T
S
Storage Temperature –65 125 °C
T
J
Junction Temperature – 125 °C
Digital Inputs V
SS
– 0.3 V
DD
+ 0.3 V
Digital Outputs referred to V
DD
V
SS
– 0.3 V
DD
+ 0.3 V
Electro-Static Discharge 2 – kV
Recommended Operating Conditions
Parameter Description Min Typ Max Unit
V
DD
Operating Voltage 3.14 3.3 3.47 V
T
A
Ambient Temperature, Commercial Grade 0 – 70 °C
Ambient Temperature, Industrial Grade –40 – 85 °C
C
LOAD
Max. Load Capacitance on the CLK output – – 15 pF
f
REF
[4]
Reference Frequency 0.5 – 100 MHz
t
PU
Power up time for all VDDs to reach minimum specified voltage (power ramps must
be monotonic)
0.05 – 500 ms
Pullable Crystal Specifications for VCXO Application ONLY
Parameter Name Min Typ Max Unit
C
LNOM
Crystal Load Capacitance – 14 – pF
R
1
Equivalent Series Resistance – – 25 Ω
R
3
/R
1
Ratio of Third Overtone Mode ESR to Fundamental Mode ESR. Ratio used
because typical R
1
values are much less than the maximum spec
3–––
DL Crystal Drive Level. No external series resistor assumed – 0.5 2 mW
F
3SEPHI
Third overtone separation from 3*F
NOM
(High Side) 300 – – ppm
F
3SEPLO
Third overtone separation from 3*F
NOM
(Low Side) – – –150 ppm
C0 Crystal shunt capacitance 7pF
C0/C1 Ratio of Shunt to motional capacitance 180 – 250
C
1
Crystal motional capacitance 14.4 18 21.6 fF
Recommended Crystal Specifications for ALL other Applications
Parameter Name Description Min Typ Max Unit
F
NOM
Nominal Crystal Frequency Parallel resonance, fundamental mode, and
AT cut
8–30MHz
C
LNOM
Nominal Load Capacitance – 12 – pF
R
1
Equivalent Series Resistance
(ESR)
Fundamental mode – 35 50 Ω
DL Crystal Drive Level No external series resistor assumed – 0.5 2 mW
Note
4. Configuration dependent, see the one-page documents.
[+] Feedback
