GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV080
8 Watts, 26.5 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION CASE OUTLINE
The UTV 080 is a COMMON EMITTER transistor capable of providing 8
Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input prematching for full broadband capability.
Gold Metalization and Diffused Ballasting are used to provide high reliability
and supreme ruggedness.
55JV, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 65 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVceo Collector to Emitter Voltage 28 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 2.5 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Power Input Vcc = 26.5 Volts 1.0 Watts
Pg
IMD
1
VSWR
1
Power Out - Pk Sync F = 470 - 860 MHz 8 Watts
Power Gain Ic = 1.7 Amps 9 10 dB
Intermodulation Distortion Pref = 8 Watts -58 dB
Load Mismatch Tolerance F = 860 MHz 3:1
LVceo
2
BVces
Collector to Base Breakdown Ic = 20 mA 50 Volts
2
BVebo
2
h
FE
2
Cob
2
θ
jc
Collector to Emitter Breakdown Ic = 60 mA 28 Volts
Emitter to Base Breakdown Ie = 5 mA 3.5 Volts
Current Gain Vce = 5 V, 500 mA 10
Output Capacitance Vcb = 26 V, F = 1 MHz pF
Thermal Resistance Tc = 25 C 2.5 C/W
o o
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
2: Per side
Initial Issue June, 1994
