DG4157DN-T1-E4

DG4157
www.vishay.com
Vishay Siliconix
S15-1745-Rev. G, 27-Jul-15
1
Document Number: 68800
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low Voltage, 1 Ω Single SPDT Analog Switch (1:2 Multiplexer)
with Power Down Protection
DESCRIPTION
The DG4157 is a high performance single pole double throw
analog switch designed for 1.65 V to 5.5 V operation with
single power rail.
Fabricated with high density CMOS technology, the device
achieves low on resistance as 1 Ω at 4.5 V power supply and
fast switching speed. The - 3 dB bandwidth is typically
117 MHz.
The DG4157 features break before make switch
performance, and guarantees logic high control input
threshold as low as 1.4 V over the range up to 5.5 V.
It can handle both analog and digital signals and permits
signals with amplitudes of up to V
CC
to be transmitted in
either direction.
Power down protection circuit is built in to prevent abnormal
current path through signal pins during power down
condition.
Each output pin (A, B
0
, or B
1
) can withstand greater than
8 kV (human body model).
It is available in both SC-70-6 and miniQFN6 packages.
The features make it an ideal part for the switching of audio,
video, and data stream.
FEATURES
Direct cross of industry standard xxx4157
1.65 V to 5.5 V operation voltage range
Guaranteed 1.4 V logic high input threshold
at V
CC
= 5.5 V
117 MHz, - 3 dB bandwidth
Low on-resistance
Power down protection
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Available
TRUTH TABLE
LOGIC INPUT (S) FUNCTION
0 B
0
Connected to A
1B
1
Connected to A
S
A
1
2
3
6
Top View
B
1
GND
B
0
4
SC-70-6L
5
V+
Pin 1
Device Marking: G0xx
xx = Date/Lot Traceability Code
G0xx
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C
SC-70-6L DG4157DL-T1-E3
miniQFN-6L DG4157DN-T1-E4
miniQFN-6L
Top View
Pin 1
Device Marking: Fx
x = Date/Lot Traceability Code
2 5
1
3
6
4
AB
0
V+GND
S
B
1
Fx
DG4157
www.vishay.com
Vishay Siliconix
S15-1745-Rev. G, 27-Jul-15
2
Document Number: 68800
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Signals on A, or B or S exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 3.1 mW/°C above 70 °C.
d. Derate 2 mW/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
Reference V+ to GND -0.3 to +6
V
S, A, B
a
-0.3 to (V+ + 0.3)
Continuous Current (Any terminal) ± 200
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 400
Storage Temperature D Suffix -65 to +150 °C
Power Dissipation (Packages)
b
SC-70-6L
c
250
mW
miniQFN-6L
d
160
SPECIFICATIONS
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, V
IN
= 0 V or V+
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
b
TYP.
c
MAX.
b
DC Characteristics
On Resistance R
ON
V+ = 2.7 V, B
0
or B
1
= 1.5 V, I
O
= 100 mA
Room - 1.7 2.5
Ω
Full - - 3
V+ = 4.5 V, B
0
or B
1
= 3.5 V, I
O
= 100 mA
Room - 0.95 1.2
Full - - 1.4
On Resistance Flatness R
FLATNESS
V+ = 2.7 V, B
0
or B
1
= 0.75 V, 1.5 V,
I
O
= 100 mA
Room - 0.2 -
V+ = 4.5 V, B
0
or B
1
= 1 V, 3.5 V,
I
O
= 100 mA
Room - 0.14 0.3
Full - - 0.4
On Resistance Match ΔR
ON
V+ = 2.7 V, B
0
or B
1
= 1.5 V,
I
O
= 100 mA
Room - 0.04 -
V+ = 4.5 V, B
0
or B
1
= 3.5 V,
I
O
= 100 mA
Room - 0.05 0.12
Full - - 0.15
Switch Off Leakage Current I
OFF
V+ = 5.5 V, A = 1 V, 4.5 V
B
0
or B
1
= 4.5 V, 1 V or floating
Room -2 - 2
nA
Full -20 - 20
Switch On Leakage Current I
ON
Room -4 - 4
Full -40 - 40
Digital Control
Input, High Voltage V
INH
V+ = 2.7 V to 5.5 V
Full 1.4 - -
V
Input, Low Voltage V
INL
Full - - 0.4
Input Current I
INH
, I
INL
V
IN
= 0 or V+ Full -1 - 1 μA
Power Supply
Power Supply Range V+ Full 1.65 - 5.5 V
Quiescent Supply Current I+ V+ = 5.5 V, V
IN
= 0 V, 5.5 V
Room - 0.05 0.5
μA
Full - - 1
DG4157
www.vishay.com
Vishay Siliconix
S15-1745-Rev. G, 27-Jul-15
3
Document Number: 68800
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
AC Characteristics
Turn-On Time
d
t
ON
V+ = 2.7 V, B
0
or B
1
= 1.5 V, R
L
= 50 Ω,
C
L
= 35 pF
Room - 40 55
ns
Full - - 60
V+ = 4.5 V, B
0
or B
1
= 1.5 V, R
L
= 50 Ω,
C
L
= 35 pF
Room - 22 37
Full - - 40
Turn-Off Time
d
t
OFF
V+ = 2.7 V, B
0
or B
1
= 1.5 V, R
L
= 50 Ω,
C
L
= 35 pF
Room - 12 27
Full - - 30
V+ = 4.5 V, B
0
or B
1
= 1.5 V, R
L
= 50 Ω,
C
L
= 35 pF
Room - 8 23
Full - - 25
Break-Before-Make Time
d
t
BBM
V+ = 2.7 V, B
0
= B
1
= 1.5 V, R
L
= 50 Ω,
C
L
= 35 pF
Room
126 -
V+ = 4.5 V, B
0
= B
1
= 1.5 V, R
L
= 50 Ω,
C
L
= 35 pF
115 -
Charge Injection
d
QC
L
= 1 nF, R
GEN
= 0 Ω, V
GEN
= 0 V Room - 50 - pC
Off Isolation
d
OIRR
R
L
= 50 Ω, f = 1 MHz
Room
--58-
dB
R
L
= 50 Ω, f = 10 MHz - -31 -
Crosstalk
d
X
TALK
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz
Room
--63-
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz - -36 -
Bandwidth
d
BW R
L
= 50 Ω Room - 117 - MHz
Total Harmonic Distortion
d
THD R
L
= 600 Ω, V
IN
= 0.5 V, f = 20 kHz to 20 kHz Room - 0.02 - %
Capacitance
BX Port Off Capacitance
d
C
B(OFF)
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz Room
-20-
pFA Port On Capacitance
d
C
A(ON)
-57-
Control Pin Capacitance
d
C
IN
-5-
SPECIFICATIONS
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, V
IN
= 0 V or V+
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
b
TYP.
c
MAX.
b

DG4157DN-T1-E4

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs SPDT Low Voltage w/ Power Down Prot
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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