ADG738/ADG739 Data Sheet
Rev. A | Page 4 of 20
V
DD
= 3 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
B Version W Version
Parameter 25°C −40°C to +85°C −40°C to +105°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
V
On Resistance (R
) 6 Ω typ V
= 0 V to V
, I
= 10 mA; see Figure 19
11 12 16 Ω max
On-Resistance Match Between
Channels (∆R
ON
)
0.4 Ω typ V
S
= 0 V to V
DD
, I
S
= 10 mA
1.2 1.4 Ω max
On-Resistance Flatness (R
FLAT(ON)
)
V
S
= 0 V to V
DD
, I
S
= 10 mA
LEAKAGE CURRENTS V
= 3.3 V
Source Off Leakage I
S
(Off) ±0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V; see Figure 20
±0.1 ±0.3 ±0.6 nA max
Drain Off Leakage I
(Off) ±0.01 nA typ V
= 3 V/1 V, V
= 1 V/3 V
±0.1 ±1 ±1.3 nA max
Channel On Leakage I
, I
(On) ±0.01 nA typ V
= V
= 3 V/1 V, see Figure 21
±0.1 ±1 ±1.3 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
0.4 V max
Input Current, I
or I
0.005 µA typ V
= V
or V
±0.1 ±0.1 µA max
C
, Digital Input Capacitance 3 pF typ
Output Low Voltage 0.4 max I
SINK
= 6 mA
C
, Digital Output Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS
1
t
40 ns typ R
= 300 Ω, C
= 35 pF, see Figure 22; V
= 2 V
70 75 ns max
t
14 ns typ R
= 300 Ω, C
= 35 pF, see Figure 22; V
= 2 V
25 40 ns max
Break-Before-Make Time Delay, t
D
12 ns typ R
L
= 300 Ω, C
L
= 35 pF;
Charge Injection ±3 pC typ V
S
= 1.5 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 23
Off Isolation −55 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 25
Channel-to-Channel Crosstalk −55 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−75 dB typ R
= 50 Ω, C
= 5 pF, f = 1 MHz; see Figure 24
−3 dB Bandwidth
ADG738 65 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 25
C
S
(Off) 13 pF typ
C
(Off)
ADG738 85 pF typ
ADG739 42 pF typ
ADG738 96 pF typ
ADG739 48 pF typ
POWER REQUIREMENTS V
DD
= 3.3 V
Digital Inputs = 0 V or 3.3 V
20 20 µA max
1
Guaranteed by design, not subject to production test.
